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We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using…

介观与纳米尺度物理 · 物理学 2013-05-15 Satyaprakash Sahoo , Anand P. S. Gaur , Majid Ahmadi , Maxime J-F Guinel , Ram S. Katiyar

This study presents the design, fabrication, and test of a micro accelerometer with intrinsic processing capabilities, that integrates the functions of sensing and computing in the same MEMS. The device consists of an inertial mass…

新兴技术 · 计算机科学 2020-03-25 Bruno Barazani , Guillaume Dion , Jean-François Morissette , Louis Beaudoin , Julien Sylvestre

As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…

硬件体系结构 · 计算机科学 2026-05-22 Siddhartha Raman Sundara Raman

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations…

应用物理 · 物理学 2024-01-04 K. Maity , J. -F. Dayen , B. Doudin , R. Gumeniuk , B. Kundys

Magnetic skyrmions have attracted considerable interest, especially after their recent experimental demonstration at room temperature in multilayers. The robustness, nanoscale size and non-volatility of skyrmions have triggered a…

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

In this work, we unveil the effect of RS, induced by a current-voltage hysteresis cycles across CVD-grown monolayer MoS2 based gated RRAM, on its transistors electrical and reliability characteristics. A unique gate voltage dependence on…

应用物理 · 物理学 2021-12-08 Ansh , Mayank Shrivastava

Heat management is crucial for state-of-the-art applications such as passive radiative cooling, thermally adjustable wearables, and camouflage systems. Their adaptive versions, to cater to varied requirements, lean on the potential of…

应用物理 · 物理学 2023-11-06 Peng Jin , Liujun Xu , Guoqiang Xu , Jiaxin Li , Cheng-Wei Qiu , Jiping Huang

Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to…

介观与纳米尺度物理 · 物理学 2023-10-19 Pengfei Wang , Moyu Chen , Yongqin Xie , Chen Pan , Kenji Watanabe , Takashi Taniguchi , Bin Cheng , Shi-Jun Liang , Feng Miao

Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…

新兴技术 · 计算机科学 2019-04-02 Raihan Sayeed Khan , Nadim H. Kanan , Jake Scoggin , Helena Silva , Ali Gokirmak

Amorphous silica (a-SiO$_2$) is a foundational disordered material for which the thermal transport properties are important for various applications. To accurately model the interatomic interactions in classical molecular dynamics (MD)…

材料科学 · 物理学 2023-11-22 Ting Liang , Penghua Ying , Ke Xu , Zhenqiang Ye , Chao Ling , Zheyong Fan , Jianbin Xu

Recent theoretical works on two-dimensional molybdenum disulfide, MoS$_2$, with sulfur vacancies predict that the suppression of thermal transport in MoS$_2$ by point defects is more prominent in monolayers and becomes negligible as layer…

材料科学 · 物理学 2023-12-08 Ranjuna M K , Jayakumar Balakrishnan

Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing rely on unconventional materials and device functionalities,…

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

介观与纳米尺度物理 · 物理学 2015-06-12 Michael S. Fuhrer , James Hone

Predicting solid-solid phase transitions remains a long-standing challenge in materials science. Solid-solid transformations underpin a wide range of functional properties critical to energy conversion, information storage, and thermal…

材料科学 · 物理学 2025-06-03 Cibrán López , Joshua Ojih , Ming Hu , Josep Lluis Tamarit , Edgardo Saucedo , Claudio Cazorla

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive…

This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…

新兴技术 · 计算机科学 2022-07-05 Sourav De , Bo-Han Qiu , Wei-Xuan Bu , Md. Aftab Baig , Chung-Jun Su , Yao-Jen Lee , Darsen Lu

Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…

新兴技术 · 计算机科学 2015-09-11 Gina C. Adam , Brian D. Hoskins , Mirko Prezioso , Dmitri B. Strukov