相关论文: A Context-Switching/Dual-Context ROM Augmented RAM…

End-to-end (E2E) automatic speech recognition (ASR) systems often have difficulty recognizing uncommon words, that appear infrequently in the training data. One promising method, to improve the recognition accuracy on such rare words, is to…

Emotion recognition plays a crucial role in various domains of human-robot interaction. In long-term interactions with humans, robots need to respond continuously and accurately, however, the mainstream emotion recognition methods mostly…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…

Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…

We design and study a Contextual Memory Tree (CMT), a learning memory controller that inserts new memories into an experience store of unbounded size. It is designed to efficiently query for memories from that store, supporting logarithmic…

Augmented Reality (AR) systems are increasingly integrating foundation models, such as Multimodal Large Language Models (MLLMs), to provide more context-aware and adaptive user experiences. This integration has led to the development of AR…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

This paper introduces the Large Memory Model (LM2), a decoder-only Transformer architecture enhanced with an auxiliary memory module that aims to address the limitations of standard Transformers in multi-step reasoning, relational…

This paper proposes a novel transformer-based model architecture for medical imaging problems involving analysis of vertebrae. It considers two applications of such models in MR images: (a) detection of spinal metastases and the related…

A major limitation for the broader scope of problems solvable by transformers is the quadratic scaling of computational complexity with input size. In this study, we investigate the recurrent memory augmentation of pre-trained transformer…

Learning an effective speaker representation is crucial for achieving reliable performance in speaker verification tasks. Speech signals are high-dimensional, long, and variable-length sequences containing diverse information at each…

This paper presents a low cost PMOS-based 8T (P-8T) SRAM Compute-In-Memory (CIM) architecture that efficiently per-forms the multiply-accumulate (MAC) operations between 4-bit input activations and 8-bit weights. First, bit-line (BL)…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

Automatic speech recognition (ASR) models make fewer errors when more surrounding speech information is presented as context. Unfortunately, acquiring a larger future context leads to higher latency. There exists an inevitable trade-off…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

Many high end and next generation computing systems to incorporated alternative memory technologies to meet performance goals. Since these technologies present distinct advantages and tradeoffs compared to conventional DDR* SDRAM, such as…

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/Ioff of read path by 219% and 113%,…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…