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相关论文: Experimental verification of band convergence in S…

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We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our…

We report first principles LDA calculations of the electronic structure and thermoelectric properties of $\beta $-Zn$_{4}$Sb$_{3}$. The material is found to be a low carrier density metal with a complex Fermi surface topology and…

材料科学 · 物理学 2009-10-30 Seong-Gon Kim , I. I. Mazin , D. J. Singh

In this first-principles study, we investigated the thermoelectric properties of the full-Heusler compound CsK$_2$Sb at different compressive strains. This material exhibits a valence band structure with significant effective mass…

材料科学 · 物理学 2025-05-14 Øven A. Grimenes , G. Jeffrey Snyder , Ole M. Løvvik , Kristian Berland

The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a…

材料科学 · 物理学 2007-05-23 Lars Lykke , Bo B. Iversen , Georg K. H. Madsen

We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis…

材料科学 · 物理学 2015-05-11 K. Kutorasinski , B. Wiendlocha , S. Kaprzyk , J. Tobola

We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3…

Band engineering is an important mechanism to increase the thermopower of thermoelectric materials by reconstructing the band structure near Fermi level. PbTe and SnTe are the most representative systems in which band engineering were…

材料科学 · 物理学 2018-01-29 Xiaojian Tan , Guoqiang Liu , Jingtao Xu , Hezhu Shao , Haochuan Jiang , Jun Jiang

We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma…

材料科学 · 物理学 2015-06-19 Guangsha Shi , Emmanouil Kioupakis

The thermoelectric properties of La-filled skutterudites are discussed from the point of view of their electronic structures. These are calculated from first principles within the local density approximation. The electronic structure is in…

材料科学 · 物理学 2009-10-30 D. J. Singh , I. I. Mazin

The LnSbTe family is well known for hosting a plethora of intriguing characteristics stemming from its crystalline symmetry, magnetic structure, 4f electronic correlations and spin orbit coupling (SOC) phenomena. In this paper, we have…

We report thickness-tuned electrical transport and Hall resistivity in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets. We find that when the thickness of the nanosheet is blow about 40 nm, the system takes a clear…

介观与纳米尺度物理 · 物理学 2017-04-05 Jianwei Lu , Guolin Zheng , Xiangde Zhu , Wei Ning , Hongwei Zhang , Yuyan Han , Jiyong Yang , Haifeng Du , Kun Yang , Haizhou Lu , Yuheng Zhang , Mingliang Tian

Electronic structure of newly synthesized single crystals of calcium iron arsenide doped with sodium with Tc ranging from 33 to 14 K has been determined by angle-resolved photoemission spectroscopy (ARPES). The measured band dispersion is…

We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structure of n-, p- type PbTe, PbSe and PbS, which are pre- mier thermoelectric materials. Our ARPES measurements on them…

Materials with reduced dimensionality offer beneficial density-of-states (DOS) profiles for thermoelectric energy conversion, but can be impractical in realistic devices. Encouragingly, bulk high-symmetry materials can also exhibit similar…

材料科学 · 物理学 2026-03-10 Øven A. Grimenes , Ole M. Løvvik , Kristian Berland

The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and…

We investigate the electronic structure of ternary palladates $A$Pd$_3$O$_4$ ($A$ = Sr, Ca) using valence band photoemission spectroscopy and band structure calculations. Overall width of the valence band and energy positions of various…

强关联电子 · 物理学 2024-04-25 B. H. Reddy , Asif Ali , Ravi Shankar Singh

Thermoelectric (TE) materials are useful for applications such as waste heat harvesting or efficient and targeted cooling. While various strategies towards superior thermoelectrics through a reduction of the lattice thermal conductivity…

Lead chalcogenides are the promising thermoelectric (TE) materials having narrow band gap. The present work investigates the TE behaviour of PbSe in the temperature range 300-500 K. The transport properties of the sample have been studied…

We report a transport, thermodynamic, and spectroscopic study of the recently identified topological semiconductor ZrTe$_5$ with a focus on elucidating the connections between its band structure and unusual thermoelectric properties. Using…

We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the \emph{light} hole upper valence bands (UVBs)…

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