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相关论文: Quantum criticality of bandwidth-controlled Mott t…

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We show that the dilute Fermi gas quantum critical universality class quantitatively describes the Mott/metal crossover of the two-dimensional Hubbard model for temperatures somewhat less than (roughly half) the tunneling but much greater…

强关联电子 · 物理学 2013-05-14 Kaden R. A. Hazzard , Ana Maria Rey , Richard T. Scalettar

I survey theoretical advances in our understanding of the quantum phases and phase transitions of Mott insulators, and of allied conducting systems obtained by doping charge carriers. A number of new experimental examples of Mott insulators…

强关联电子 · 物理学 2009-04-23 Subir Sachdev

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

The competition between short-range and cavity-mediated infinite-range interactions in a cavity-boson system leads to the existence of a superfluid phase and a Mott-insulator phase within the self-organized regime. In this work, we…

We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…

强关联电子 · 物理学 2009-11-13 Igor Travenec

We study the boundary criticality in 2D interacting topological insulators. Using the determinant quantum Monte Carlo method, we present a nonperturbative study of the boundary quantum phase diagram in the Kane-Mele-Hubbard-Rashba model.…

强关联电子 · 物理学 2026-04-30 Yang Ge , Hong Yao , Shao-Kai Jian

Quantum phase transitions typically result in a broadened critical or crossover region at nonzero temperature. Josephson arrays are a model of this phenomenon, exhibiting a superconductor-insulator transition at a critical wave impedance,…

介观与纳米尺度物理 · 物理学 2023-12-05 S. Mukhopadhyay , J. Senior , J. Saez-Mollejo , D. Puglia , M. Zemlicka , J. Fink , A. P. Higginbotham

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_\mathrm{c},U_\mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers…

强关联电子 · 物理学 2020-04-07 A. Reymbaut , M. Boulay , L. Fratino , P. Sémon , Wei Wu , G. Sordi , A. -M. S. Tremblay

Motivated by recent experimental realizations of polar metals with broken inversion symmetry, we explore the emergence of strong correlations driven by criticality when the polar transition temperature is tuned to zero. Overcoming…

强关联电子 · 物理学 2020-07-21 Pavel A. Volkov , Premala Chandra

We investigate quantum phase transitions in the extended periodic Anderson model, which includes electron correlations within and between itinerant and localized bands. We calculate zero and finite temperature properties of the system using…

强关联电子 · 物理学 2009-11-13 Akihisa Koga , Norio Kawakami , Robert Peters , Thomas Pruschke

Electrons undergoing a Mott transition may shed their charge but persist as neutral excitations of a quantum spin liquid (QSL). We introduce concrete two-dimensional models exhibiting this exotic behavior as they transition from…

强关联电子 · 物理学 2022-05-31 Eyal Leviatan , David F. Mross

In the two-dimensional organic charge-transfer salts kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x} a systematic variation of the Br content from x = 0 to 0.9 allows us to tune the Mott transition by increasing the bandwidth. At temperatures below…

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…

For both electron- and hole-doped cuprates, superconductivity appears in the vicinity of suppressed broken symmetry order, suggesting that quantum criticality plays a vital role in the physics of these systems. A confounding factor in…

In this paper we present a determinant quantum monte carlo study of the two dimensional Hubbard model with random site disorder. We show that, as in the case of bond disorder, the system undergoes a transition from an Anderson insulating…

强关联电子 · 物理学 2013-05-29 P. B. Chakraborty , P. J. H. Denteneer , R. T. Scalettar

Zero-temperature or quantum phase transitions in itinerant electronic systems both with and without quenched disordered are discussed. Phase transitions considered include, the ferromagnetic transition, the antiferromagnetic transition, the…

统计力学 · 物理学 2008-02-03 T. R. Kirkpatrick , D. Belitz

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

We show, by using a correlated Jastrow wave function and a mapping onto a classical model, that the two-dimensional Mott transition in a simple half-filled one-band model can be unconventional and very similar to the binding-unbinding…

强关联电子 · 物理学 2009-11-11 Manuela Capello , Federico Becca , Seiji Yunoki , Sandro Sorella

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…