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相关论文: Quantum criticality of bandwidth-controlled Mott t…

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Quantum phase transitions are ubiquitous in many exotic behaviors of strongly-correlated materials. However the microscopic complexity impedes their quantitative understanding. Here, we observe thoroughly and comprehend the rich…

介观与纳米尺度物理 · 物理学 2018-07-04 Z. Iftikhar , A. Anthore , A. K. Mitchell , F. D. Parmentier , U. Gennser , A. Ouerghi , A. Cavanna , C. Mora , P. Simon , F. Pierre

Strongly correlated metals close to the Mott transition display unusual transport regimes, together with large spectral weight transfers in optics and photoemission. We briefly review the theoretical understanding of these effects, based on…

强关联电子 · 物理学 2009-11-10 A. Georges , S. Florens , T. A. Costi

Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…

We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects,…

强关联电子 · 物理学 2013-02-07 M. C. O. Aguiar , V. Dobrosavljevic

We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…

The interaction-induced metal-insulator transition should be in the Ising universality class. Experiments on layered organic superconductors suggest that the observed critical endpoint of the first-order Mott transition belongs instead to a…

强关联电子 · 物理学 2012-06-19 Patrick Sémon , A. -M. S. Tremblay

The Mott critical point between a metal and a correlated insulator has usually been studied via density or spin density bosonic mode fluctuations according to the standard Ginzburg-Landau-Wilson phase transition paradigm. A moment's…

强关联电子 · 物理学 2011-02-19 Zaira Nazario , David I. Santiago

Metallic quantum critical phenomena are believed to play a key role in many strongly correlated materials, including high temperature superconductors. Theoretically, the problem of quantum criticality in the presence of a Fermi surface has…

强关联电子 · 物理学 2019-05-03 Erez Berg , Samuel Lederer , Yoni Schattner , Simon Trebst

We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling…

强关联电子 · 物理学 2015-03-17 H. Terletska , J. Vucicevic , D. Tanasković , V. Dobrosavljević

We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the…

强关联电子 · 物理学 2009-11-13 T. Senthil

Using Mott insulators as a prototypical example, we demonstrate a dynamics-based characterization of quantum phases of matter through a general N-body renormalization group framework. The essential "Mott-ness" turns out to be characterized…

强关联电子 · 物理学 2025-10-17 Matheus de Sousa , Zhiyu Fan , Wei Ku

Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi-…

In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball…

强关联电子 · 物理学 2017-09-21 P. Haldar , M. S. Laad , S. R. Hassan

An organic Mott insulator, $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, was investigated by resistance measurements under continuously controllable He gas pressure. The first-order Mott transition was demonstrated by observation of clear…

强关联电子 · 物理学 2009-11-10 F. Kagawa , T. Itou , K. Miyagawa , K. Kanoda

Understanding the real time dynamics of quantum systems without quasiparticles constitutes an important yet challenging problem. We study the superfluid-insulator quantum-critical point of bosons on a two-dimensional lattice, a system whose…

强关联电子 · 物理学 2014-05-06 William Witczak-Krempa , Erik Sorensen , Subir Sachdev

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii

We study the quantum criticality at finite temperature for three two-dimensional (2D) $JQ_3$ models using the first principle nonperturbative quantum Monte Carlo calculations (QMC). In particular, the associated universal quantities are…

强关联电子 · 物理学 2022-04-27 J. -H. Peng , D. -R. Tan , L. -W. Huang , F. -J. Jiang

Adaptive quantum circuits-where a quantum many-body state is controlled using measurements and conditional unitary operations-are a powerful paradigm for state preparation and quantum error correction tasks. They can support two types of…

量子物理 · 物理学 2025-06-30 Thomas Iadecola , Justin H. Wilson , J. H. Pixley

Quantum phase transitions in metals are often accompanied by violations of Fermi liquid behavior in the quantum critical regime. Particularly fascinating are transitions beyond the Landau-Ginzburg-Wilson concept of a local order parameter.…

强关联电子 · 物理学 2010-10-01 Matthias Vojta