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Materials that transition between metal and insulator, the two main states that distinguish all solids, are fascinating because they underlie many mysteries at the frontier of solid state physics. In 1T-TaS$_{2}$, the metal-insulator…

We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…

强关联电子 · 物理学 2011-09-02 Yejun Feng , R. Jaramillo , A. Banerjee , J. M. Honig , T. F. Rosenbaum

We studied the transmittance and reflectance of the low-dimensional Mott-Hubbard insulator TiOCl in the infrared and visible frequency range as a function of pressure. The strong suppression of the transmittance and the abrupt increase of…

强关联电子 · 物理学 2012-06-05 C. A. Kuntscher , S. Frank , A. Pashkin , M. Hoinkis , M. Klemm , M. Sing , S. Horn , R. Claessen

The temperature-dependent infrared properties of $\theta$-(BEDT-TTF)$_2$RbZn(SCN)$_4$ were investigated. In the temperatures above the metal-insulator (M-I) transition, the optical conductivity remains finite in the low energy region, but…

强关联电子 · 物理学 2007-05-23 N. L. Wang , H. Mori , S. Tanaka , J. Dong , B. P. Clayman

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla

In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical…

强关联电子 · 物理学 2025-12-29 Nareg Ghazikhanian , Pavel Salev , Dayne Sasaki , Yayoi Takamura , Ivan K. Schuller

We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared…

We advert to the fact that presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies of localized impurity states. We provide arguments that in…

强关联电子 · 物理学 2020-10-08 I. Batko , M. Batkova

We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n \leq 3, driven by the softening of a polaronic…

材料科学 · 物理学 2010-12-16 A. Perucchi , L. Baldassarre , A. Nucara , P. Calvani , C. Adamo , D. G. Schlom , P. Orgiani , L. Maritato , S. Lupi

Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi-…

Samarium hexaboride is an anomaly, having many exotic and seemingly mutually incompatible properties. It was proposed to be a mixed-valent semiconductor, and later - a topological Kondo insulator, and yet has a Fermi surface despite being…

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved optical reflectivity. In photo excited non-equilibrium states, we found a sign reverse in transient reflectivity spectra $\Delta R/R$ (t $>$ 0), from…

强关联电子 · 物理学 2018-05-25 X. C. Nie , H. Y. Liu , Xiu Zhang , Peng Gu , Hai-Ying Song , Fan Li , Jian-Qiao Meng , Yu-Xia Duin , Shi-Bing Liu

We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the…

介观与纳米尺度物理 · 物理学 2015-05-28 T. M. Lu , W. Pan , D. C. Tsui , P. C. Liu , Z. Zhang , Y. H. Xie

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…

强关联电子 · 物理学 2016-03-22 Dragana Popović

Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…

介观与纳米尺度物理 · 物理学 2017-03-07 Yang Lu , I-Wei Chen

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

We present measurements of the optical spectra on single crystals of spinel-type compound \cis. This material undergoes a sharp metal-insulator transition at 230 K. Upon entering the insulating state, the optical conductivity shows an…

强关联电子 · 物理学 2009-11-10 N. L. Wang , G. H. Cao , P. Zheng , G. Li , Z. Fang , T. Xiang , H. Kitazawa , T. Matsumoto

The electronic interaction between an optically active singlet state ($S_1S_0$) and a dark state of singlet multiplicity, known as correlated triplet pair ($^1[TT]$), plays a crucial role in the effective transformation from $S_1S_0$ to…