相关论文: Polarization description of successive ferroelectr…
Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science[1-9]. However, the coexistence of magnetism and conventional ferroelectricity is physically…
In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in…
Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using…
Dabconium hybrid perovskites include a number of recently-discovered ferroelectric phases with large spontaneous polarisations. The origin of ferroelectric response has been rationalised in general terms in the context of hydrogen bonding,…
We have investigated the field-induced-changes in both the magnetization and the polarization in ferromagnet/Insulator/ferroelectric (FM/I/FE) multilayer by following both the Stoner-Wohlfarth (SW) model and the Landau theory. It has been…
Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial…
It is of great interest to design and make materials in which ferroelectric polarisation is coupled to other order parameters such as lattice, magnetic and electronic instabilities. Such materials will be invaluable in next-generation data…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
Based on ab initio density functional theory, we have investigated a microscopic mechanism that leads to Fe$^{2+}_{B}$/Fe$^{3+}_{B}$ dimerization and consequent ferroelectricity in charge ordered Fe$_{3}$O$_{4}$ with $P2$ symmetry. In…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the…
Atomic-scale understanding of HfO2 ferroelectricity is important to help address many challenges in developing reliable and high-performance ferroelectric HfO2 (fe-HfO2) based devices. Though investigated from different angles, a factor…
Metal-organic frameworks comprehend a wide class of hybrid organic-inorganic materials with general structure A$_m$BX$_n$, with $A$ and $X$ being organic molecules and B a metal cation. This often results in enhanced structural flexibility…
We investigate the ferrimagnetism and ferroelectricity of bulk NiFe$_2$O$_4$ with tetragonal $P4_122$ ~symmetry by means of density functional calculations using generalized gradient approximation + Hubbard $U$ approach. Special attention…
Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip.…
Ferroelectricity observed in thin film $\mathrm{HfO_2}$, either doped with Si, Al, etc. or in the $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining…
Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computing. This stems from its non-volatility and ability to…
We propose a theoretical model of a ferroelectric metal where spontaneous electric polarization coexists with the conducting electrons. In our model we adopt a scenario when conducting electrons interact with two soft transverse optical…
A possible mechanism for the resistive switching observed experimentally in Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within the local density approximation and pseudopotential theory shows that by moving the…
Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite…
A microscopic mean-field theory of the phase coexistence between ferromagnetism and superconductivity in the weakly ferromagnetic itinerant electron system is constructed, while incorporating a realistic mechanism for superconducting…