相关论文: Parallel Matrix Multiplication Using Voltage Contr…

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…

Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

Multiply-accumulation (MAC) is a crucial computing operation in signal processing, numerical simulations, and machine learning. This work presents a scalable, programmable, frequency-domain parallel computing leveraging gigahertz…

We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…

The recent demonstration of current-driven magnetic domain wall logic [Z. Luo et al., Nature 579:214] was based on a three-input logic gate that was identified as a reconfigurable NAND/NOR function. We reinterpret this logic gate as a…

We propose magnetic threshold-logic (MTL) design based on non-volatile spin-torque switches. A threshold logic gate (TLG) performs summation of multiple inputs multiplied by a fixed set of weights and compares the sum with a threshold. MTL…

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion…

Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we…

Acoustic analogue computation and signal processing are of great significance, however, it's challenging to realize the acoustic computing devices because of their limitations of single function and complex structure. In this paper, an…

We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…

The increasing computational demand of AI workloads has intensified the need for energy-efficient in-memory and near-memory computing architectures, particularly because data movement often consumes significantly more energy than…

Electric control of multiple domain walls (DWs) motion is demonstrated by Pt/Co/Pt nanotracks with perpendicular magnetic anisotropy. Due to the weak microstructural disorders with small DW propagation field, the purely current-driven DW…

Artificial neural networks are a valuable tool for radio-frequency (RF) signal classification in many applications, but digitization of analog signals and the use of general purpose hardware non-optimized for training make the process slow…

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…

Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…