相关论文: Random Bitstream Generation using Voltage-Controll…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect…

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

Chaos enables the emergence of randomness in deterministic physical systems. Therefore it can be exploited for the conception of true random number generators (RNG) mandatory in classical cryptography applications. Meanwhile, nanomechanical…

The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption…

Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…

We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…

Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally intensive combinatorial optimization problems (COPs). While…

Stochastic unary computing provides low-area circuits. However, the required area consuming stochastic number generators (SNGs) in these circuits can diminish their overall gain in area, particularly if several SNGs are required. We propose…

Today's high-performance architectures are increasingly constrained by data movement latency and energy overhead, as the slowdown of single-core performance scaling coincides with the rise of highly data-intensive workloads. In-memory…

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy…

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

Superparamagnetic magnetic tunnel junctions (sMTJs) are promising components for true random number generation and probabilistic computing. Achieving high-frequency fluctuation while maintaining reliable control over output level is…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The…

Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on…

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…

This paper introduces an analog-to-stochastic converter using a magnetic tunnel junction (MTJ) device for vision chips based on stochastic computation. Stochastic computation has been recently exploited for area-efficient hardware…

Stochastic computing (SC) presents high error tolerance and low hardware cost, and has great potential in applications such as neural networks and image processing. However, the bitstream generator, which converts a binary number to…