相关论文: Random Bitstream Generation using Voltage-Controll…

Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…

We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…

Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…

Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…

Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…

Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications,…

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

With a growing interest in securing user data within the internet-of-things (IoT), embedded encryption has become of paramount importance, requiring light-weight high-quality Random Number Generators (RNGs). Emerging stochastic device…

Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses.…

Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…

High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…

Stochastic computing, a form of computation with probabilities, presents an alternative to conventional arithmetic units. Magnetic Tunnel Junctions (MTJs), which exhibit probabilistic switching, have been explored as Stochastic Number…

True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs)…

This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…

In recent years, true random number generators (TRNGs) based on magnetic tunnelling junction (MTJ) have become increasingly attractive. This is because MTJ-based TRNGs offer some advantages over traditional CMOS-based TRNGs, such as smaller…

Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as…