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Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

材料科学 · 物理学 2014-12-08 Xiang Yang

Neuromorphic computing is a brainlike information processing paradigm that requires adaptive learning mechanisms. A spiking neuro-evolutionary system is used for this purpose; plastic resistive memories are implemented as synapses in…

神经与进化计算 · 计算机科学 2015-05-19 Gerard David Howard , Larry Bull , Ben de Lacy Costello , Andrew Adamatzky , Ella Gale

The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…

应用物理 · 物理学 2025-09-23 Md Tawsif Rahman Chowdhury , Alireza Moazzeni , Gozde Tutuncuoglu

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

介观与纳米尺度物理 · 物理学 2018-04-11 Yang Lu , Jung Ho Yoon , Yanhao Dong , I-Wei Chen

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…

材料科学 · 物理学 2022-05-12 Anurag Pritam , Ritu Gupta , Prakash Chandra Mondal

Non-Volatile Memories (NVMs) such as Resistive RAM (RRAM) are used in neuromorphic systems to implement high-density and low-power analog synaptic weights. Unfortunately, an RRAM cell can switch its state after reading its content a certain…

神经与进化计算 · 计算机科学 2021-06-18 Shihao Song , Twisha Titirsha , Anup Das

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

新兴技术 · 计算机科学 2016-12-20 Xinyu Wu , Vishal Saxena

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

介观与纳米尺度物理 · 物理学 2017-04-12 Yang Lu , Jong Ho Lee , I-Wei Chen

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

材料科学 · 物理学 2023-06-21 Farhana Yasmin Rahman , Debajyoti Bhattacharjee , Syed Arshad Hussain

We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory…

介观与纳米尺度物理 · 物理学 2017-09-06 Victor Karpov , Dipesh Niraula , Ilya Karpov , Roza Kotlyar

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

其他凝聚态物理 · 物理学 2013-07-04 Siddharth Gaba , Patrick Sheridan , Jiantao Zhou , Shinhyun Choi , Wei Lu

Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…

新兴技术 · 计算机科学 2023-08-08 Rajalekshmi TR , Rinku Rani Das , Chithra R , Alex James

The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…

Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary…

其他凝聚态物理 · 物理学 2013-10-21 Omid Kavehei , Efstratios Skafidas

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

Deep learning is often criticized by two serious issues which rarely exist in natural nervous systems: overfitting and catastrophic forgetting. It can even memorize randomly labelled data, which has little knowledge behind the…

机器学习 · 计算机科学 2021-05-11 Zeke Xie , Fengxiang He , Shaopeng Fu , Issei Sato , Dacheng Tao , Masashi Sugiyama

Brain-inspired computing proposes a set of algorithmic principles that hold promise for advancing artificial intelligence. They endow systems with self learning capabilities, efficient energy usage, and high storage capacity. A core concept…

神经与进化计算 · 计算机科学 2022-12-01 Younes Bouhadjar , Sebastian Siegel , Tom Tetzlaff , Markus Diesmann , Rainer Waser , Dirk J. Wouters

Reinforcement learning (RL) is a foundation of learning in biological systems and provides a framework to address numerous challenges with real-world artificial intelligence applications. Efficient implementations of RL techniques could…

机器学习 · 计算机科学 2021-09-29 Wilkie Olin-Ammentorp , Yury Sokolov , Maxim Bazhenov

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

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