相关论文: All-electrical spin-to-charge conversion in sputte…
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge…
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…
$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…
Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large…
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics…
The antiferromagnetism in transition metal compounds is mostly mediated by the bridging anions through a so-called superexchange mechanism. However, in materials like normal spinels $AB_2X_4$ with local moments only at the $A$ site, such an…
Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the…
The origin and efficiency of charge-to-spin conversion, known as the Edelstein effect (EE), has been typically linked to spin-orbit coupling mechanisms, which require materials with heavy elements within a non-centrosymmetric environment.…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
We study the connection between the spin-heat and spin-charge response in a disordered Fermi gas with spin-orbit coupling. It is shown that the ratio between the above responses can be expressed as the thermopower $S=-(\pi…
Experimental investigations of spin-charge interconversion in magnetic bilayers comprising a ferromagnet adjacent to a topological insulator have reported scattered results on the spin-charge and charge-spin conversion efficiency.…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the…