相关论文: Single Event Tolerance of X-ray SOI Pixel Sensors

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion…

We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic…

We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This…

We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…

We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with…

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and…

We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented…

We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed…

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…

Designing integrated circuits in radiation environments such as the High Luminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed to radiation-induced Single Event Effects (SEE). In deep sub-micron technology devices, the…

We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV…

We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an…

The Gravity Recovery And Climate Experiment - Follow On (GRACE-FO) satellite mission (2018-now) hosts the novel Laser Ranging Interferometer (LRI), a technology demonstrator for proving the feasibility of laser interferometry for…

We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator…

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual…

Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future…

We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard…

The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good…

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…