相关论文: Advanced interfacial phase change material: struct…

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long…

Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as…

Chalcogenide phase-change materials (PCMs) are important for nonvolatile memory and reconfigurable photonic technologies. The GeTe-Sb2Te3 mixture system, commonly referred to as GST, is the most well-known PCM family, but new PCMs are…

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order…

Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic…

Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation and wide-gamut color printing applications. Despite recent advances, most demonstrations…

The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers…

Photonic neural networks capable of rapid programming are indispensable to realize many functionalities. Phase change technology can provide nonvolatile programmability in photonic neural networks. Integrating direct laser writing technique…

The phase change compound Ge$_2$Sb$_2$Te$_5$ (GST225) is exploited in advanced non-volatile electronic memories and in neuromorphic devices which both rely on a fast and reversible transition between the crystalline and amorphous phases…

We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are…

Cooper-pair density modulation (CPDM) states are superconducting phases in which the order parameter varies periodically in real space without breaking translational symmetry. Recently, moire superlattices in layered materials have emerged…

Photonic topological insulators (PTIs) offer robust platforms for light manipulation, but reconfigurable control of their topological properties without degrading performance remains a major challenge. While phase-change materials (PCMs)…

Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for…

Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of…

The dream of room temperature superconductors has inspired intense research effort to find routes for enhancing the superconducting transition temperature (Tc). Therefore, single-layer FeSe on a SrTiO3 substrate, with its extraordinarily…

A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed…

The effect of intermixing at the interface of short period PbTiO$_3$/SrTiO$_3$ superlattices is studied using first-principles density functional theory. The results indicate that interfacial intermixing significantly enhances the…

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures.…

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…

Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…