相关论文: Ferroelectric Domain Wall Logic Gates
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects…
Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first principles calculations, we characterize all different types of domain walls forming on…
We report the development of a superconducting acousto-optic phase modulator fabricated on a lithium niobate substrate. A titanium-diffused optical waveguide is placed in a surface acoustic wave resonator, where the electrodes for mirrors…
The rich electron correlations and highly coherent transport in reconfigurable devices sketched by a conductive atomic force microscope tip at the LaAlO3/SrTiO3 interface have enabled the oxide platform an ideal playground for studying…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…
Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…
Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…
All-optical integrated circuits for computing and information processing have been pursued for decades as a potential strategy to overcome the speed limitations intrinsic to electronics. However feasible on-chip integrated logic units and…
Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and…
Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging…
Lithium niobate (LN) devices have been widely used in optical communication and nonlinear optics due to its attractive optical properties. The emergence of thin-film lithium niobate on insulator (LNOI) improves performances of LN-based…
Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…
Electro-optic modulators (EOMs) are vital for optical imaging and information processing, with free-space devices enabling LiDAR and beam control. Lithium niobate (LN), powered by the strong Pockels effect and scalable LN-on-insulator…
Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure…
Research on current-induced domain wall (DW) motion in heavy metal/ferromagnet structures is crucial for advancing memory, logic, and computing devices. Here, we demonstrate that adjusting the angle between the DW conduit and the current…
The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Here, we calculated the static conductivity of charged domain walls…
Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be…