相关论文: A Compensated Design of the LGAD Gain Layer

Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments,…

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge…

A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered…

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…

Low Gain Avalanche Detectors(LGADs) is one of the candidate sensing technologies for future 4D-tracking applications and recently have been qualified to be used in the ATLAS and CMS timing detectors for the CERN High Luminosity Large Hadron…

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo…

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is destroyed is not available on a defect…

High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation…

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good…

Low Gain Avalanche Diodes (LGADs) are thin (20-50 $\mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the…

Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise…

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time…

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are…

The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the…

Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge in the use of LGADs, studied by several research groups, is…

In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal…

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates…

Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are…

Low-Gain Avalanche Diodes (LGADs) provide moderate internal gain and time resolutions of a few tens of picoseconds, making them a key technology for ultrafast timing in high-energy physics and beyond. However, both their gain and timing…

We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…