相关论文: Current-induced magnetization reversal in (Ga,Mn)(…
In this work, the spin pumping technique was employed to investigate the anomalous inverse spin Hall effect in BIG/NiO/Fe samples where BIG[(Bi,Tm)3(Fe,Ga)5O12] exhibits perpendicular magnetic anisotropy. Our results reveal an intriguing…
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is…
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…
Extensive studies on the impact of bismuth incorporation into the (Ga,Mn)As prototype dilute ferromagnetic semiconductor (DFS) on its structural, magnetic and magnetotransport properties are summarized in this review. Thin epitaxial layers…
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110]…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of polarization plane of…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M,…
A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies…
Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…
We present a novel method for measuring the modulation of magnetic anisotropy and the strength of spin-orbit interaction by an electrical current in nanomagnets. Our systematic study explores the current dependencies of these properties…
A mechanism of current-induced magnetization reversal based on the parametric resonance is described. The source of the magnetization reversal is a current-induced magnetic field, which is applied perpendicularly to the easy axis of…
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…