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The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator…

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

Dynamical mean-field theory (DMFT) maps the local Green's function of the Hubbard model to that of the Anderson impurity model and thus gives an approximate solution of the Hubbard model from the solution of simpler quantum impurity model.…

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern

We present a formulation of quantum molecular dynamics that includes electron correlation effects via the Gutzwiller method. Our new scheme enables the study of the dynamical behavior of atoms and molecules with strong electron…

强关联电子 · 物理学 2017-06-05 Gia-Wei Chern , Kipton Barros , Cristian D. Batista , Joel D. Kress , Gabriel Kotliar

The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational…

强关联电子 · 物理学 2014-05-09 W. S. Oliveira , M. C. O. Aguiar , V. Dobrosavljevic

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Simulating quantum many-body systems is believed to be one of the most promising applications of near-term noisy quantum computers. However, in the near term, system size limitation will remain a severe barrier for applications in materials…

强关联电子 · 物理学 2024-05-10 Anshumitra Baul , Herbert F Fotso , Hanna Terletska , Juana Moreno , Ka-Ming Tam

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

The Mott-Hubbard metal-insulator transition is studied within a simplified version of the Dynamical Mean-Field Theory (DMFT) in which the coupling between the impurity level and the conduction band is approximated by a single pole at the…

强关联电子 · 物理学 2009-10-31 R. Bulla , M. Potthoff

Machine learning opens new avenues for modelling correlated materials. Quantum embedding approaches, such as the dynamical mean-field theory (DMFT), provide corrections to first-principles calculations for strongly correlated materials,…

计算物理 · 物理学 2021-12-01 Evan Sheridan , Christopher Rhodes , Francois Jamet , Ivan Rungger , Cedric Weber

The interplay between delocalisation and repulsive interactions can cause electronic systems to undergo a Mott transition between a metal and an insulator. Here we use neural network hidden fermion determinantal states (HFDS) to uncover…

强关联电子 · 物理学 2024-12-10 Chloé Gauvin-Ndiaye , Joseph Tindall , Javier Robledo Moreno , Antoine Georges

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

Density of states, dynamic (optical) conductivity and phase diagram of strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT+\Sigma…

强关联电子 · 物理学 2009-11-13 E. Z. Kuchinskii , I. A. Nekrasov , M. V. Sadovskii

We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metallic state down to a vanishing temperature scale. We identify…

强关联电子 · 物理学 2011-04-06 A. Amaricci , G. Sordi , M. J. Rozenberg

The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically…

强关联电子 · 物理学 2009-10-31 K. Held , G. Keller , V. Eyert , D. Vollhardt , V. I. Anisimov

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda
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