相关论文: Optimization of pin GaAs/AlGaAs Heterojunction Nan…

In this study, we designed and optimized the performance of pin junction GaAs/AlGaAs heterojunction nanowire solar cell arrays. It is done by performing coupled optoelectronic simulations to find the optimal doping for the GaAs core and…

The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n…

In this paper, we have investigated the optical properties of GaAs nanocone (NC), inverted nanocone (INC), and hourglass (HG) shaped solar cells by performing Finite Difference Time Domain (FDTD) simulations. The different structures are…

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…

Effect of geometrical and structural parameters on the efficiency of the tandem solar cell based on the III-V nanowire array on silicon is studied by the means of coupled opto-electrical simulations. A close to realistic structure,…

This paper proposes an efficient three-layered p-GaAs/p-CIGS/n-CdS (PPN), a unique solar cell architecture. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance than the ones utilizing cadmium sulfide…

An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…

The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications,…

The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative…

As a potential solution for low-cost efficient solar cells, radial junctions consisting of ZnO nanowires arrays embedded in Cu2O thin films have been theoretically modeled. Calculations have been performed to explore the geometric…

This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a technique which allows defect free material growth. The…

Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…

The GaAs/AlGaAs materials system is well suited to multi-bandgap applications such as the multiple quantum well solar cell. GaAs quantum wells are inserted in the undoped AlGaAs active region of a pin structure to extend the absorption…

We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin…

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the…

We analysed self-consistently photoconversion efficiency of direct-gap A3B5 semicon-ductors based solar cells and optimised their main physical characteristics. Using gallium ar-senide (GaAs) as the example and new efficient optimization…

Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…