相关论文: Orthogonal Spin Current Injected Magnetic Tunnel J…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
We theoretically study the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two dimensional Josephson configuration comprised of disordered surface channels of a three…
The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Spin-polarized transport through a marginal Fermi liquid (MFL) which is connected to two noncollinear ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function approach. It is found that the…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…
We revisit the problem of point-contact tunnel junctions involving one-dimensional superconductors and present a simple scheme for computing the full current-voltage characteristics within the framework of the non-equilibrium Keldysh Green…
Dynamical magnets can pump spin currents into superconductors. To understand such a phenomenon, we develop a method utilizing the generalized Usadel equation to describe time-dependent situations in superconductors in contact with dynamical…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…
In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been…
This paper proposes a spintronic neuron structure composed of a heterostructure of magnets and a piezoelectric with a magnetic tunnel junction (MTJ). The operation of the device is simulated using SPICE models. Simulation results illustrate…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…