相关论文: Orthogonal Spin Current Injected Magnetic Tunnel J…
We report a study of spin dependent transport in a system composed of a quantum dot coupled to a normal metal lead and a ferromagnetic lead (NM-QD-FM). We use the master equation approach to calculate the spin-resolved currents in the…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We explore inelastic cotunneling through a strongly Coulomb-blockaded quantum dot attached to two ferromagnetic leads in the weak coupling limit using a generic quantum Langevin equation approach. We first develop a Bloch-type equation…
Based on Keldysh's nonequilibrium Green function method, the spin-dependent transport properties in a ferromagnet-quantum dot (QD)-ferromagnet coupled system are investigated. It is shown the spin current shows quite different…
Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such…
We introduce the concept of bond spin current, which describes the spin transport between two sites of the lattice model of a multiterminal spin-orbit (SO) coupled semiconductor nanostructure, and express it in terms of the spin-dependent…
Spiking neural networks aim to emulate the brain's properties to achieve similar parallelism and high-processing power. A caveat of these neural networks is the high computational cost to emulate, while current proposals for analogue…
An extended Keldysh formalism, well suited to properly take into account the initial correlations, is used in order to deal with the time-dependent current response of a resonant tunneling system. We use a \textit{partition-free} approach…
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not…
We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…
The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads.…
We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We theoretically study the nonlocal spin transport in a device consisting of a nonmagnetic metal (N) and ferromagnetic injector (F1) and detector (F2) electrodes connected to N. We solve the spin-dependent transport equations in a device…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
We study the dynamics of a single spin embedded in the tunneling barrier between two superconductors. As a consequence of pair correlations in the superconducting state, the spin displays rich and unusual dynamics. To properly describe the…