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Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn…

Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the…

介观与纳米尺度物理 · 物理学 2013-11-19 F. Forster , A. Molina-Sanchez , S. Engels , A. Epping , K. Watanabe , T. Taniguchi , L. Wirtz , C. Stampfer

Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in…

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

介观与纳米尺度物理 · 物理学 2015-06-04 Søren Ulstrup , Marco Bianchi , Richard Hatch , Dandan Guan , Alessandro Baraldi , Dario Alfè , Liv Hornekær , Philip Hofmann

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

We compute, from first-principles, the frequency of the E2g, Gamma phonon (Raman G-band) of graphene, as a function of the charge doping. Calculations are done using i) the adiabatic Born-Oppenheimer approximation and ii) time-dependent…

介观与纳米尺度物理 · 物理学 2007-05-23 Michele Lazzeri , Francesco Mauri

The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed…

介观与纳米尺度物理 · 物理学 2011-04-08 D. L. Mafra , L. M. Malard , S. K. Doorn , H. Htoon , J. Nilsson , A. H. Castro Neto , M. A. Pimenta

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…

介观与纳米尺度物理 · 物理学 2015-05-13 F. Molitor , D. Graf , C. Stampfer , T. Ihn , K. Ensslin

Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two-dimensional layered capacitor configuration. Using graphene and boron nitride respectively as the electrodes and the insulating…

量子物理 · 物理学 2017-05-19 Sina Khorasani , Akshay Koottandavida

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes…

材料科学 · 物理学 2013-12-09 Kanokporn Chattrakun , Shengqiang Huang , K. Watanabe , T. Taniguchi , A. Sandhu , B. J. LeRoy

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

We describe Raman spectroscopy based method of measuring thermal conductivity of thin films, and review significant results achieved with this technique pertinent to graphene and other two-dimensional materials. The optothermal Raman method…

介观与纳米尺度物理 · 物理学 2019-03-18 Hoda Malekpour , Alexander A. Balandin

Graphene monolayer is a material with zero band gap, because of which its applications in optoelectronics are limited. The question arises, can we modify the optoelectronic properties of graphene by doping it with other atoms? Synthesis of…

材料科学 · 物理学 2026-03-18 Samayita Das , Alok Shukla

We study the effects of Kohn anomalies on the superconducting properties in electron- and hole-doped cases of monolayer blue phosphorene, considering both adiabatic and non-adiabatic phonon dispersions using first-principles calculations.…

超导电性 · 物理学 2022-10-05 Mohammad Alidoosti , Davoud Nasr Esfahani , Reza Asgari

Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions yields detectors with extraordinarily high intrinsic…

One of the unique properties of graphene is its extremely high mechanical strength. Several studies have shown that the mechanical failure of graphene sheet under a tensile strain is due to the enhancement of the Kohn anomaly of the zone…

介观与纳米尺度物理 · 物理学 2018-09-19 Sonia Haddad , Lassaad Mandhour

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…

Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and…

仪器与探测器 · 物理学 2017-05-09 Adolfo De Sanctis , Gareth F. Jones , Nicola J. Townsend , Monica F. Craciun , Saverio Russo
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