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In this work, the Effective Phonon Dispersion of $\beta$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy is investigated using the Phonon unfolding formalism. To capture the true randomness of the system, supercells are designed using the technique of…

材料科学 · 物理学 2023-12-29 Ankit Sharma , Animesh Datta , Uttam Singisetti

The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…

Ga$_2$O$_3$ and (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design, such as band gap variation with alloy composition and band…

材料科学 · 物理学 2018-08-01 Tianshi Wang , Wei Li , Chaoying Ni , Anderson Janotti

We describe procedures to obtain the electronic structure of disordered systems using either tight binding like models or quite directly from ab inito density functional band structure calculations. The band structure is calculated using…

材料科学 · 物理学 2011-09-20 M. W. Haverkort , I. S. Elfimov , G. A. Sawatzky

Supercells are often used in ab initio calculations to model compound alloys, surfaces and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates…

材料科学 · 物理学 2014-09-12 O. Rubel , A. Bokhanchuk , S. J. Ahmed , E. Assmann

Ga$_2$O$_3$ is a wide-bandgap material of interest for a wide variety of devices, many of these requiring heterostructures, for instance to achieve carrier confinement. A common method to create such heterostructures is to alloy with…

材料科学 · 物理学 2024-01-26 Sierra Seacat , John L. Lyons , Hartwin Peelaers

The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme,…

Electronic structure of zinc blende AlN(1-x)$Px alloy has been calculated from first principles. Structural optimisation has been performed within the framework of LDA and the band-gaps calculated with the modified Becke-Jonson (MBJLDA)…

材料科学 · 物理学 2014-08-01 M. J. Winiarski , M. Polak , P. Scharoch

Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field,…

介观与纳米尺度物理 · 物理学 2022-11-01 Yifan , Zhang , Mengren , Liu , Guru Khalsa , Debdeep Jena

For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously…

材料科学 · 物理学 2015-06-03 Daniel Mourad , Gerd Czycholl

Interest in substitutional disordered alloys has recently reemerged with focus on the symmetry-sensitive properties in the alloy such as topological insulation and Rashba effect. A substitutional random alloy manifests a distribution of…

材料科学 · 物理学 2019-04-30 Zhi Wang , Jun-Wei Luo , Alex Zunger

Band structure unfolding is a key technique for analyzing and simplifying the electronic band structure of large, internally distorted supercells that break the primitive cell's translational symmetry. In this work, we present an efficient…

材料科学 · 物理学 2026-02-10 Jingkai Quan , Nikita Rybin , Matthias Scheffler , Christian Carbogno

We investigate the effects of alloying and growth orientation on the properties of the ultra-wide bandgap semiconductor \beta-Ga2O3 and pseudomorphic AlGaO alloy heterojunctions. Band offsets are computed from first principles using density…

Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…

A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and…

应用物理 · 物理学 2019-11-07 Zhigang Song , Weijun Fan , Chuanseng Tan , Qijie Wang , Donguk Nam , Daohua Zhang , Greg Sun

High-resolution mapping of electronic properties at oxide heterointerfaces remains challenging due to probe delocalization and overlapping signals. In this work, we employ monochromated, probe-corrected scanning transmission electron…

Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a…

Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The…

材料科学 · 物理学 2015-08-26 Petr A. Khomyakov , Mathieu Luisier , Andreas Schenk

Using density functional theory, we investigate the electronic structure of the alpha phase of an antimony monolayer in its isolated form and in contact to the (111) surface of gold. We demonstrate that the isolated single-layer actually…

The purpose of this work was to calculate the electronic band structure of Cd$_{1-x}$Fe$_x$Se. Ab-initio, calculations are performed in the Atomistix Toolkit program within the Density Functional Theory and Local Spin Density Approximation…

材料科学 · 物理学 2025-06-24 Matanat A. Mehrabova , Elshad Allahyarov , Niyazi H. Hasanov , Nurana R. Gasimova
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