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相关论文: Mottness in two-dimensional van der Waals Nb$_3$X$…

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The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with…

The Hubbard model provides an idealized description of electronic correlations in solids. Despite its simplicity, the model features a competition between several different phases that have made it one of the most studied systems in…

强关联电子 · 物理学 2023-05-09 Sergii Grytsiuk , Mikhail I. Katsnelson , Erik G. C. P. van Loon , Malte Rösner

Mott physics is at the root of a plethora of many-body quantum phenomena in quantum materials. Recently, the stacked or twisted structures of van der Waals (vdW) materials have emerged as a unique platform for realizing exotic correlated…

Motivated by recent experiments realizing correlated phenomena and superconductivity in 2D van der Waals devices, we consider the general problem of whether correlation effects may be enhanced by modifying band structure while keeping a…

强关联电子 · 物理学 2019-06-19 Edwin W. Huang , Mohammad-Sadegh Vaezi , Zohar Nussinov , Abolhassan Vaezi

The doped Hubbard model is one of the paradigmatic platforms to engineer exotic quantum many-body states, including charge-ordered states, strange metals and unconventional superconductors. While undoped and doped correlated phases have…

强关联电子 · 物理学 2025-02-04 Xin Huang , Jose L. Lado , Jani Sainio , Peter Liljeroth , Somesh Chandra Ganguli

By combining ab initio downfolding with cluster dynamical mean-field theory, we study the degree of correlations in monolayer, bilayer and bulk breathing-mode kagome van der Waals materials Nb$_3$(F,Cl,Br,I)$_8$. Our new material-specific…

Bulk MnBi$_2$Te$_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low N\'eel temperature of $\sim 25\,\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure…

材料科学 · 物理学 2025-08-12 Yuanhao Zhu , Xixi Yuan , Ying Zhao , Jin Zhang , Zijing Ding , Huixia Fu

In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials…

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…

强关联电子 · 物理学 2016-05-10 Jason Iaconis , Hiroaki Ishizuka , D. N. Sheng , Leon Balents

Moir\'e materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides…

强关联电子 · 物理学 2022-10-05 Yang Xu , Kaifei Kang , Kenji Watanabe , Takashi Taniguchi , Kin Fai Mak , Jie Shan

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to…

We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing…

Motivated by the discovery of high-temperature superconductivity in bilayer nickelate La$_3$Ni$_2$O$_7$ under pressure, we investigate the ground-state phase diagram and correlation effects using determinant quantum Monte Carlo simulations…

强关联电子 · 物理学 2025-02-07 Jian-Jian Yang , Dao-Xin Yao , Han-Qing Wu

Stacking and twisting van der Waals materials provide a powerful tool to design quantum matter and engineer electron correlation. For instance, monolayers of 1T- and 1H-TaS2 are Mott insulating and metallic (also superconducting),…

材料科学 · 物理学 2025-02-14 Hyeonhu Bae , Roser Valenti , Igor I. Mazin , Binghai Yan

The possibility of "orbitally selective Mott transitions" within a multiband Hubbard model, in which one orbital with large on-site electron-electron repulsion $U_1$ is insulating and another orbital, to which it is hybridized, with small…

强关联电子 · 物理学 2022-09-15 Yuxi Zhang , Chunhan Feng , Rubem Mondaini , George G. Batrouni , Richard T. Scalettar

We present aspects of strong electron correlation in a model of a BI/M/BI heterostructure where BI is a band insulator and M can be tuned from a metal to a Mott insulator by varying the on-site repulsion. An effective one-dimensional…

强关联电子 · 物理学 2009-11-13 Andreas Rüegg , Sebastian Pilgram , Manfred Sigrist

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…

强关联电子 · 物理学 2015-05-14 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Layered transition metal dichalcogenide 1T-NbSe_2 is a good candidate to explore the charge density wave (CDW) and Mott physics. However, the effects of stacking orders and interlayer coupling in CDW 1T-NbSe_2 are still less explored and…

强关联电子 · 物理学 2022-10-07 Tao Jiang , Haotian Wang , Heng Gao , Qinghe Zheng , Zhenya Li , Wei Ren
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