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For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…

应用物理 · 物理学 2024-10-10 Juan Bisquert , Nir Tessler

Quantum-accurate computer simulations play a central role in understanding phase-change materials (PCMs) for advanced memory technologies. However, direct quantum-mechanical simulations are necessarily limited to simplified models,…

材料科学 · 物理学 2022-09-20 Yuxing Zhou , Wei Zhang , En Ma , Volker L. Deringer

We use first-principle Quantum Monte-Carlo (QMC) simulations and numerical exact diagonalization to analyze the low-frequency charge carrier mobility within a simple tight-binding model of molecular organic semiconductors on a…

材料科学 · 物理学 2025-07-23 Pavel Buividovich , Johann Ostmeyer , Alessandro Troisi

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

硬件体系结构 · 计算机科学 2021-12-06 Stephen Longofono , Seyed Mohammad Seyedzadeh , Alex K. Jones

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the…

量子物理 · 物理学 2017-01-12 P. Pfeiffer , I. L. Egusquiza , M. Di Ventra , M. Sanz , E. Solano

Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…

介观与纳米尺度物理 · 物理学 2024-11-22 Juan B. Roldan , David Maldonado , C. Aguilera-Pedregosa , F. J. Alonso , Yiping Xiao , Yaqing Shen , Wenwen Zheng , Yue Yuan , Mario Lanza

Recurrent quantum models (RQMs) realize sequential quantum processes through repeated application of a unitary operation on a memory system coupled with a series of output registers. However, such models often rely on unnecessarily large…

量子物理 · 物理学 2026-03-11 Chufan Lyu , Ximing Wang , Mile Gu , Thomas J. Elliott , Chengran Yang

Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…

应用物理 · 物理学 2024-11-08 Shengbo Wang , Jingfang Pei , Cong Li , Xuemeng Li , Li Tao , Arokia Nathan , Guohua Hu , Shuo Gao

A collision model (CM) is a framework to describe open quantum dynamics. In its {\it memoryless} version, it models the reservoir $\mathcal R$ as consisting of a large collection of elementary ancillas: the dynamics of the open system…

量子物理 · 物理学 2017-09-13 Salvatore Lorenzo , Francesco Ciccarello , G. Massimo Palma

Due to their inference, data representation and reconstruction properties, Variational Autoencoders (VAE) have been successfully used in continual learning classification tasks. However, their ability to generate images with specifications…

机器学习 · 计算机科学 2022-07-22 Fei Ye , Adrian G. Bors

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

We propose Token Turing Machines (TTM), a sequential, autoregressive Transformer model with memory for real-world sequential visual understanding. Our model is inspired by the seminal Neural Turing Machine, and has an external memory…

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

新兴技术 · 计算机科学 2021-06-10 Fernando García-Redondo , Pranay Prabhat , Mudit Bhargava , Cyrille Dray

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage,…

超导电性 · 物理学 2026-04-27 Sonam Bhakat , Pushpak Banerjee , Ahmedullah Aziz , Jackson Miller , Avradeep Pal

Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated in terms of semiconductor and ionic…

介观与纳米尺度物理 · 物理学 2011-06-29 Blaise Mouttet

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

应用物理 · 物理学 2018-11-27 H. Nili , A. Vincent , M. Prezioso , M. R. Mahmoodi , I. Kataeva , D. Strukov

The possibility to simulate the properties of many-body open quantum systems with a large number of degrees of freedom is the premise to the solution of several outstanding problems in quantum science and quantum information. The challenge…

量子物理 · 物理学 2019-07-03 Alexandra Nagy , Vincenzo Savona

Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular,…

While transformer models have been highly successful, they are computationally inefficient. We observe that for each layer, the full width of the layer may be needed only for a small subset of tokens inside a batch and that the "effective"…

机器学习 · 计算机科学 2024-12-19 Bartosz Wójcik , Alessio Devoto , Karol Pustelnik , Pasquale Minervini , Simone Scardapane