相关论文: Wavelength dependence of laser-induced excitation …

Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results…

We studied the excitation process of silicon under an intense double pulse. We employed the three-temperature (electron, hole, and lattice) model (3TM) together with Maxwell's equations. We solved Maxwell's equations by the…

Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account…

We calculate the electron excitation in cubic silicon carbide (3C-SiC) caused by the intense femtosecond laser double pulses using time-dependent density functional theory (TDDFT). We assume the electron distributions in the valence band…

Materials exposed to ultrashort intense x-ray irradiation may experience various damaging conditions depending on the in-situ temperature. A pre-heated target exposed to intense x-rays plays a crucial role in numerous systems of…

The damage mechanism induced by laser pulse of different duration in borosilicate glass widely used for making confinement geometry targets which are important for laser driven shock multiplication and elongation of pressure pulse, is…

Using time-dependent density functional theory, applied to valence electrons, coupled non-adiabatically to molecular dynamics of the ions, we study the induced dynamics of ethylene subjected to the laser field. We demonstrate the reliable…

We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser…

We present a theoretical investigation of the yet unexplored ultrafast processes and dynamics of the produced excited carriers upon irradiation of Silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The…

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman…

The femtosecond laser pulse heating of silver film is investigated by performing quantum mechanics (QM), molecular dynamics (MD) and two temperature model (TTM) integrated multiscale simulation. The laser excitation dependent electron…

We report a first-principle calculation for the wavelength-dependence of a laser excitation process on a silicon surface.

As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…

Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…

Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption,…

The employment of femtosecond pulsed lasers has received significant attention due to its capability to facilitate fabrication of precise patterns at the micro- and nano- lengths scales. A key issue for efficient material processing is the…

We study the onset of electron heating in intense laser-solid interactions and its impact on the spectral quality of radiation pressure accelerated ions in both hole boring and light sail regimes. Two- and three-dimensional particle-in-cell…

We explore the temperature-dependent plasmonic modes of an n-doped double-layer silicene system which is composed of two spatially separated single layers of silicene with a distance large enough to prevent the interlayer electron…

Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface…

Single-shot laser-induced damage threshold (LIDT) measurements of multi-type free-standing ultrathin foils were performed in vacuum environment for 800 nm laser pulses with durations {\tau} ranging from 50 fs to 200 ps. Results show that…