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相关论文: Weak localization in p-type heterostructures in th…

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Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…

介观与纳米尺度物理 · 物理学 2015-06-05 F. V. Porubaev , L. E. Golub

Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…

介观与纳米尺度物理 · 物理学 2015-05-13 M. M. Glazov , L. E. Golub

We present a theory of weak localization (WL) in the presence of generic spin-dependent fields, including any type of spin-orbit coupling, Zeeman fields, and non-homogeneous magnetic textures. We go beyond the usual diffusive approximation,…

介观与纳米尺度物理 · 物理学 2024-04-30 Alberto Hijano , Stefan Ilić , F. Sebastián Bergeret

Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…

介观与纳米尺度物理 · 物理学 2014-09-05 F. V. Porubaev , L. E. Golub

We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…

介观与纳米尺度物理 · 物理学 2009-11-07 G. Schwiete , D. Taras-Semchuk , K. B. Efetov

The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…

无序系统与神经网络 · 物理学 2009-10-31 G. M. Minkov , A. V. Germanenko , O. E. Rut , O. I. Khrykin , V. I. Shashkin , V. M. Danil'tsev

The weak-localization contribution \delta\sigma(B) to the conductivity of a tunnel-coupled double-layer electron system is evaluated and its behavior in weak magnetic fields B perpendicular or parallel to the layers is examined. In a…

介观与纳米尺度物理 · 物理学 2009-10-31 O. E. Raichev , P. Vasilopoulos

A random-matrix theory is presented which shows that breaking time-reversal symmetry by itself does {\em not} suppress the weak-localization correction to the conductance of a disordered metal wire attached to a superconductor. Suppression…

凝聚态物理 · 物理学 2007-05-23 P. W. Brouwer , C. W. J. Beenakker

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the…

介观与纳米尺度物理 · 物理学 2009-11-07 N. S. Averkiev , L. E. Golub , S. A. Tarasenko , M. Willander

Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit…

材料科学 · 物理学 2009-11-07 V. K. Dugaev , P. Bruno , J. Barnas

Starting from a random matrix model, we construct the low-energy effective field theory for the noninteracting gas of quasiparticles of a disordered superconductor in the mixed state. The theory is a nonlinear sigma model, with the order…

超导电性 · 物理学 2009-10-31 R. Bundschuh , C. Cassanello , D. Serban , M. R. Zirnbauer

Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of…

介观与纳米尺度物理 · 物理学 2010-12-30 L. E. Golub

The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…

无序系统与神经网络 · 物理学 2018-07-11 G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , B. N. Zvonkov

We show that the enhancement of backscattering responsible for the weak localization is accompanied by reduction of the scattering in other directions. A simple quasiclassical interpretation of this phenomenon is presented in terms of a…

介观与纳米尺度物理 · 物理学 2009-09-25 A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii

Weak localization theory is developed for graphene heterostructures with transition metal dichalcogenides and topological insulators where the Rashba and valey-Zeeman spin-splittings of the energy spectrum are large enough. The anomalous…

介观与纳米尺度物理 · 物理学 2025-09-24 L. E. Golub

We analyze the weak localization correction to the conductivity of a spinless two-leg ladder model in the limit of strong dephasing \tau_\phi << \tau_tr, paying particular attention to the presence of a magnetic field, which leads to an…

强关联电子 · 物理学 2013-05-30 Michael P. Schneider , Sam T. Carr , Igor V. Gornyi , Alexander D. Mirlin

Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both…

介观与纳米尺度物理 · 物理学 2009-11-10 S. A. Studenikin , P. T. Coleridge , P. J. Poole

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two…

材料科学 · 物理学 2015-05-20 R. Yang , K. H. Gao , Y. H. Zhang , P. P. Chen , G. Yu , L. M. Wei , T. Lin , N. Dai , J. H. Chu

We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…

强关联电子 · 物理学 2007-05-23 A. P. Mills , A. P. Ramirez , X. P. A. Gao , L. N. Pfeiffer , K. W. West , S. H. Simon

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…

介观与纳米尺度物理 · 物理学 2009-11-07 S. A. Studenikin , P. T. Coleridge , N. Ahmed , P. Poole , A. Sachrajda
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