相关论文: Field-free spin orbit torque switching of syntheti…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
We study Dzyaloshinskii-Moriya interaction (DMI) appearing at the interface of a nonmagnetic/noncollinear-antiferromagnetic bilayer. DMI is an antisymmetric exchange interaction between neighboring magnetic spins, arising in the absence of…
Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems…
In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the…
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based…
Proposals for novel spin-orbitronic logic1 and memory devices2 are often predicated on assumptions as to how materials with large spin-orbit coupling interact with ferromagnets when in contact. Such interactions give rise to a host of novel…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Antisymmetric Dzyaloshinskii-Moriya (DM) interactions generating from the spin-orbit coupling induce various fascinating properties, like magnetoelectric (ME) effect, weak ferromagnetism and non-trivial topological spin textures like…
Interacting impurity spins adsorbed on surfaces have been suggested as basic components for applications in quantum computation and spintronics. Such spins usually prefer a parallel or antiparallel configuration, but weakly non-collinear…
The antiferromagnet (AFM) / ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation…
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile magnetic random access memories. Writing and erasing of…
Two-stage spin-flop transitions are observed the in quasi-one-dimensional antiferromagnet, BaCu${}_2$Si${}_2$O${}_7$. A magnetic field applied along the easy axis induces a spin-flop transition at 2.0 T followed by a second transition at…
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
We report an observation of a commensurate-incommensurate phase transition in a Dzyaloshinskii-Moriya spiral magnet Ba_2CuGe_2O_7. The transition is induced by applying a magnetic field in the plane of spin rotation. In this experiment we…
We study the effect of the Dzyaloshinskii-Moriya interaction (DMI) on current-induced magnetic switching of a perpendicularly magnetized heavy-metal/ferromagnet/oxide trilayer both experimentally and through micromagnetic simulations. We…
We demonstrate here that ultrathin ferromagnetic Pt/Co/Pt films with perpendicular magnetic anisotropy exhibit a sizeable Dzyaloshinskii-Moriya interaction (DMI) effect. Such a DMI effect modifies the domain-wall (DW) energy density and…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…