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相关论文: Metal-insulator transition in type II heterostruct…

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We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

无序系统与神经网络 · 物理学 2015-06-24 George Kastrinakis

In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These…

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Das Sarma , M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno

Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density…

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…

强关联电子 · 物理学 2007-05-23 A. A. Shashkin , S. V. Kravchenko , T. M. Klapwijk

We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…

强关联电子 · 物理学 2009-10-31 J. S. Thakur , D. Neilson

The possibility of the formation of an electron-hole liquid in the type II heterostructures based on monolayers (bilayers) of transition metal dichalcogenides is considered. It is indicated that additional valleys in the conduction band,…

介观与纳米尺度物理 · 物理学 2022-06-22 Pavel V. Ratnikov

To understand how charge transport is affected by a background medium and vice versa we study a two-channel transport model which captures this interplay via a novel, effective fermion-boson coupling. By means of (dynamical) DMRG we prove…

强关联电子 · 物理学 2015-05-30 H. Fehske , S. Ejima , G. Wellein , A. R. Bishop

We investigated metal-insulator transitions for double layer two-dimensional electron hole systems in transition metal dicalcogenides (TMDC) stacked on opposite sides of thin layers of boron nitride (BN). The interparticle interaction is…

介观与纳米尺度物理 · 物理学 2021-12-08 S. T. Chui , Ning Wang , B. Tanatar

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures…

Due to a strong Coulomb interaction, excitons dominate the excitation kinetics in 2D materials. While Coulomb-scattering between electrons has been well studied, the interaction of excitons is more challenging and remains to be explored. As…

材料科学 · 物理学 2021-01-27 Daniel Erkensten , Samuel Brem , Ermin Malic

We study theoretically the Coulomb interaction between excitons in transition metal dichalcogenide (TMD) monolayers. We calculate direct and exchange interaction for both ground and excited states of excitons. The screening of the Coulomb…

介观与纳米尺度物理 · 物理学 2017-09-13 V. Shahnazaryan , I. Iorsh , I. A. Shelykh , O. Kyriienko

The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent…

We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer transition metal dichalcogenides (mTMD) using Coulomb disorder in the environment as the underlying mechanism.…

介观与纳米尺度物理 · 物理学 2022-04-25 Seongjin Ahn , Sankar Das Sarma

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…

材料科学 · 物理学 2007-05-23 P. P. Boriskov , A. L. Pergament , A. A. Velichko , G. B. Stefanovich , N. A. Kuldin

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…

介观与纳米尺度物理 · 物理学 2020-05-12 P. L. Pekh , P. V. Ratnikov , A. P. Silin

Charge separated interlayer excitons in transition metal dichalcogenide (TMDC) heterobilayers are being explored for moir\'e exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb…

介观与纳米尺度物理 · 物理学 2021-03-17 Jue Wang , Qianhui Shi , En-Min Shih , Lin Zhou , Wenjing Wu , Yusong Bai , Daniel A. Rhodes , Katayun Barmak , James Hone , Cory R. Dean , X. -Y. Zhu

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

强关联电子 · 物理学 2016-11-18 A. A. Shashkin , S. V. Kravchenko
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