相关论文: Radiation damage uniformity in a SiPM

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch…

Prototype SiPMs with 4384 pixels of dimensions $15 \times 15~\mu $m$^2$ produced by KETEK have been irradiated with reactor neutrons to eight fluences between $10^9$ and $5\times 10^{14}$ cm$^{-2}$. For temperatures between $-30~^\circ $C…

Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at…

The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\times $15, 25$\times $25, 50$\times $50, and 100$\times $100 $\mu $m$^2$, manufactured by KETEK, has been investigated. From the current-voltage…

We present a detailed investigation of the afterpulse effect in silicon photomultipliers (SiPMs), using a dedicated structure with single-cell readout. This enables direct measurement of intrinsic device properties and observation of…

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of MPPCs from Hamamatsu were exposed to gamma rays and neutrons at the…

Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor…

Silicon Photomultipliers with cell-pitch ranging from 12 $\mu$m to 20 $\mu$m were tested against neutron irradiation at moderate fluences to study their performance for calorimetric applications. The photosensors were developed by FBK…

Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In…

Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived.…

Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…

Silicon Photomultipliers (SiPMs) are quickly replacing traditional photomultiplier tubes (PMTs) as the readout of choice for gamma-ray scintillation detectors in space. While they offer substantial size, weight and power saving, they have…

The use of Silicon Photo-Multipliers(SiPMs)has become popular in the design of High Energy Physics experimental apparatus with a growing interest for their application in detector area where a significant amount of non-ionising dose is…

The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating…

We report on the measurement of the radiation hardness of silicon photomultipliers (SiPMs) manufactured by Fondazione Bruno Kessler in Italy (1 mm$^2$ and 6.2 mm$^2$), Center of Perspective Technology and Apparatus in Russia (1 mm$^2$ and…

Silicon Photo-multipliers (SiPMs) are very sensitive photo-detectors that experienced a big development in the last years in several applications, like LIDAR, astrophysics, medical imaging and high energy physics (HEP) experiments. In HEP…

Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV…

We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1…

The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…

The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of…