相关论文: Observation of nonlinear planar Hall effect in mag…

In a topological insulator (TI)/magnetic insulator (MI) hetero-structure, large spin-orbit coupling of the TI and inversion symmetry breaking at the interface could foster non-planar spin textures such as skyrmions at the interface. This is…

Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength…

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (ITHE), where the noncoplanar spin textures of insulating…

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…

The planar Hall effect (PHE), previously observed in Weyl and Dirac semimetals due to the chiral anomaly, emerges with a different origin in topological insulators (TIs), where in-plane magnetic fields induce resistivity anisotropy. In…

In an intriguing recent experiment, it has been found that the two-dimensional (2D) surface states of a three-dimensional (3D) strong topological insulator (TI) support a non-zero Hall voltage transverse to an applied electric field even…

The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional…

A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films…

Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance…

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new…

Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an…

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…

We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the…

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures…

We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall…

Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The…

The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented…

Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe…