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We report on a systematic study of the field dependence of the Hall resistivity $\rho _{yx} (B)$ as a function of doping in thin films of electron-doped superconducting cuprate Pr$_{2-x}$Ce$_{x}$CuO$_{4 \pm \delta}$ (PCCO). Across the…

超导电性 · 物理学 2024-10-23 M. Dion , S. Ghotb , G. Hardy , P. Fournier

First principles calculations through density functional theory (DFT)+$U$ method were performed to assess the effect of Li interstitial doping on the optoelectronic properties of NiO and of cubic, hexagonal, and monoclinic WO$_3$. The…

A strong anisotropic distribution of the holes in Ni 3d and O 2p orbitals is observed in the polarization dependent O1s and Ni2p3/2 x-ray absorption spectroscopy of the linear-chain nickelate Y1-xCaxBaNiO5 (x = 0, 0.05, 0.1, 0.2), which…

强关联电子 · 物理学 2009-11-07 Z. Hu , M. Knupfer , M. Kielwein , U. K. Roessler , M. S. Golden , J. Fink , F. M. F. de Groot , T. Ito , G. Kaindl

Metal-insulator transition features as a transformation, from a highly charge conductive state to another state where charge conductivity is greatly suppressed when decreasing the temperature. Here we demonstrate two consecutive transitions…

强关联电子 · 物理学 2017-03-08 M. S. Saleem , C. Song , J. J. Peng , B. Cui , F. Li , Y. D. Gu , F. Pan

The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In…

Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. Ta$_2$NiSe$_5$ has been widely regarded as a leading candidate, yet the nature of…

材料科学 · 物理学 2025-12-11 Keyu Wei , Yixuan Luo , Kenji Watanabe , Takashi Taniguchi , Yanfeng Guo , Xiaoxiang Xi

We investigate the effect of Ni doping on the Fe-site in single crystals of the magnetic superconductor RbEuFe$_4$As$_4$ for doping concentrations of up to 4%. A clear suppression in the superconducting transition temperature is observed in…

超导电性 · 物理学 2020-02-19 K. Willa , M. P. Smylie , Y. Simsek , J. -K. Bao , D. Y. Chung , M. G. Kanatzidis , W. -K. Kwok , U. Welp

The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…

强关联电子 · 物理学 2018-01-17 A. Banerjee , J. Sannigrahi , S. Giri , S. Majumdar

The layered perovskite cobaltite RBaCo$_2$O$_{5.5}$ (R: rare-earth elements or Yttrium) exhibits an abrupt temperature-induced metal$-$insulator transition (MIT) and has been attributed to spin-state ordering (SSO) of Co$^{3+}$ ions. Here…

Thermoelectric properties of the system La$_2$NiO$_{4+\delta}$ have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of…

强关联电子 · 物理学 2016-04-25 Victor Pardo , Antia S. Botana , Daniel Baldomir

The physical properties of La$_4$Ni$_3$O$_{10}$ with a 2D-like Ruddlesden-Popper-type crystal structure are extraordinarily dependent on temperature and chemical substitution. By introducing Al$^{3+}$ atoms ($x$) randomly at the Ni-sites,…

In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence…

强关联电子 · 物理学 2022-05-20 E. Z. Kuchinskii , N. A. Kuleeva , D. I. Khomskii , M. V. Sadovskii

Understanding the similarities and differences between adding or removing electrons from a charge-transfer insulator may provide insights about the origin of the electron-hole asymmetry found in cuprates. Here we study with cellular…

强关联电子 · 物理学 2025-01-08 G. Sordi , G. L. Reaney , N. Kowalski , P. Sémon , A. -M. S. Tremblay

The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped…

强关联电子 · 物理学 2008-03-04 T. Valla , T. E. Kidd , P. D. Johnson , K. W. Kim , C. C. Homes , G. D. Gu

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Topological insulators are a new class of insulators with conducting surface state. Most of the topological insulators are chalcogenides, where a tiny amount of chalcogen vacancy destroys the predicted bulk insulating state and results in a…

强关联电子 · 物理学 2026-02-20 Sathishkumar M , Asha Ann Abrahama , Rajesh Kumar Sahu , Soma Banik , Soham Manni

The simultaneous presence of sizable spin-orbit interactions and electron correlations in iridium oxides has led to predictions of novel ground states including Dirac semimetals, Kitaev spin liquids, and superconductivity. Electron and hole…

强关联电子 · 物理学 2017-02-22 S. Chikara , G. Fabbris , J. Terzic , G. Cao , D. Khomskii , D. Haskel

Corundum oxide Ti$_2$O$_3$ shows the metal-insulator transition around 400-600 K accompanying the nearest Ti$^{3+}$-Ti$^{3+}$ bond ($a_{1g}a_{1g}$ singlet state) formation along the $c$ axis. In order to clarify the hole-doping effect for…

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

Using density functional based LDA+U method and linear-response theory, we study the magnetic exchange interactions of the superconductor Nd{1-x}Sr{x}NiO2. Our calculated nearest-neighbor exchange constant J1=82 meV is large, weakly…

强关联电子 · 物理学 2021-02-17 Xiangang Wan , Vsevolod Ivanov , Giacomo Resta , Ivan Leonov , Sergey Y. Savrasov