中文
相关论文

相关论文: Temperature control of diffusive memristor hystere…

200 篇论文

Diffusive memristors owing to their ability to produce current spiking when a constant or slowly changing voltage is applied are competitive candidates for the development of artificial electronic neurons. These artificial neurons can be…

Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…

新兴技术 · 计算机科学 2016-11-30 Isha Gupta , Alexantrou Serb , Ali Khiat , Ralf Zeitler , Stefano Vassanelli , Themistoklis Prodromakis

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

其他凝聚态物理 · 物理学 2013-07-04 Siddharth Gaba , Patrick Sheridan , Jiantao Zhou , Shinhyun Choi , Wei Lu

The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron…

Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical…

We present the effect of temperature on the switching characteristics of a bistable nonlinear nanomechanical beam. At MHz-range frequencies, we find that it is possible to controllably change the state of the system between two stable…

其他凝聚态物理 · 物理学 2009-11-11 Robert L. Badzey , Guiti Zolfagharkhani , Alexei Gaidarzhy , Pritiraj Mohanty

In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…

介观与纳米尺度物理 · 物理学 2024-04-18 Ioannis Messaris , Alon Ascoli , Ahmet S. Demirkol , Vasileios Ntinas , Dimitrios Prousalis , Ronald Tetzlaff

Memristors have been suggested as neuromorphic computing elements. Spike-time dependent plasticity and the Hodgkin-Huxley model of the neuron have both been modelled effectively by memristor theory. The d.c. response of the memristor is a…

新兴技术 · 计算机科学 2014-02-18 Deborah Gater , Attya Iqbal , Jeffrey Davey , Ella Gale

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

介观与纳米尺度物理 · 物理学 2016-12-21 Cheng-Chih Hsieh , Anupam Roy , Yao-Feng Chang , Davood Shahrjerdi , Sanjay K. Banerjee

It is now widely accepted that memristive devices are perfect candidates for the emulation of biological synapses in neuromorphic systems. This is mainly because of the fact that like the strength of synapse, memristance of the memristive…

神经与进化计算 · 计算机科学 2012-11-26 Farnood Merrikh-Bayat , Saeed Bagheri Shouraki , Iman Esmaili Paeen Afrakoti

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…

新兴技术 · 计算机科学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their…

应用物理 · 物理学 2024-09-17 Agustin Bou , Patricio Ramirez , Juan Bisquert

In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…

新兴技术 · 计算机科学 2025-12-02 Waleed El-Geresy , Christos Papavassiliou , Deniz Gündüz

The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…

元胞自动机与格子气 · 物理学 2015-06-03 Andrew Adamatzky , Leon Chua

The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…

Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…

应用物理 · 物理学 2025-08-25 Yuriy V. Pershin , Liya Patel , Bapi Berra , Doug Aaron , Stephen A. Sarles

The computational efficiency of the human brain is believed to stem from the parallel information processing capability of neurons with integrated storage in synaptic interconnections programmed by local spike triggered learning rules such…

新兴技术 · 计算机科学 2020-03-17 S. R. Nandakumar , Bipin Rajendran

Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…

Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that…

应用物理 · 物理学 2023-03-17 Upanya Khandelwal , Qikai Guo , Beatriz Noheda , Pavan Nukala , Saurabh Chandorkar

Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…

应用物理 · 物理学 2024-09-17 Agustin Bou , Cedric Gonzales , Pablo P. Boix , Antonio Guerrero , Juan Bisquert
‹ 上一页 1 2 3 10 下一页 ›