相关论文: A theory for anisotropic magnetoresistance in mate…
Weyl semimetals are a unique class of topological materials, possessing Fermi-arc surface states and exhibiting the chiral anomaly effect. The chiral anomaly refers to non-equilibrium charge transfer within a Weyl-node pair of opposite…
The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the…
We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography,…
Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from…
We develop a theory of angle-dependent magnetoresistance (ADMR) in metallic altermagnets coupled to ferromagnetic insulators and establish criteria that distinguish them from conventional compensated magnets with spin-orbit coupling. We…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has…
Amorphous solids that underwent a strain in one direction such that they responded in a plastic manner `remember' that direction also when relaxed back to a state with zero mean stress. We address the question `what is the order parameter…
We report resistivity and the Hall effect measurements in the normal and superconducting states of MgB2 single crystal. The resistivity has been found to be anisotropic with slightly temperature dependent resistivity ratio of about 3.5. The…
In a heavy fermion system, there exists the anomalous Hall effect caused by localized $f$-orbital freedom, in addition to the normal Hall effect due to the Lorentz force. In 1994, we found that the Hall coefficient caused by the anomalous…
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall…
Electrical resistivity ($\rho$), magnetoresistance (MR), magnetization, thermopower and Hall effect measurements on the single crystal Gd$_{2}$PdSi$_3$, crystallizing in an AlB$_2$-derived hexagonal structure are reported. The well-defined…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries…
A microscopic expression of the residual electrical resistivity tensor is derived in linear response theory for Rashba electrons scattering at a magnetic impurity with cylindrical or non-cylindrical potential. The behavior of the…
We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)As ferromagnetic semiconductor (FMS) layers grown on semi-insulating GaAs substrates. In a 10 nm-thick (In,Fe)As layer which is insulating at low temperature, we…
Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…
We have calculated the resistivity of a GaAs\slash AlGaAs heterojunction in the presence of both an in--plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into…
We present magnetic and transport properties of PrRh$_{2}$Si$_{2}$ single crystals which exhibit antiferromagnetic order below T$_{N}$ = 68 K. Well defined anomalies due to magnetic phase transition are observed in magnetic susceptibility,…