相关论文: X-Ray Silicon Drift Detector-CMOS Front-End System…

The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized…

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…

We present a silicon drift detector (SDD) system for the spectroscopy focusing array (SFA) of the enhanced X-ray timing and polarimetry (eXTP) mission. The SFA focuses on fast timing (time resolution below 10 {\mu}s) and good spectroscopy…

Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based…

We report on the development and characterization of the low-noise, low power, mixed analog-digital SIRIUS ASICs for both the LAD and WFM X-ray instruments of LOFT. The ASICs we developed are reading out large area silicon drift detectors…

The first generation of Single electron Sensitive Read Out (SiSeRO) amplifiers, employed as on-chip charge detectors for charge-coupled devices (CCDs) have demonstrated excellent noise and spectral performance: a responsivity of around 800…

A readout electronic with high time and energy resolution performance is designed for the SDD (Silicon Drift Detector) signals readout, which is aimed for X-ray pulsar based navigation (XNAV). For time measurement, the input signal is fed…

Low-noise, position-sensitive Silicon Drift Detectors (SDDs) are particularly useful for experiments in which a good energy resolution combined with a large sensitive area is required, as in the case of X-ray astronomy space missions and…

An Application Specific Integrated Circuit (ASIC), called RIGEL, designed for the sparse readout of a Silicon Pixel Drift Detector (PixDD) for space applications is presented.The low leakage current (less than 1 pA at +20 {\deg}C) and anode…

Cluster counting dN/dx is a promising method to enhance particle identification for gaseous detectors, especially in next-generation collider experiments like the FCC-ee, where good pion-kaon separation over a broad momentum range is…

Silicon Drift Detectors (SDD) equip the two central layers of the Inner Tracking System of the ALICE experiment at the LHC. Main results of systematic studies of detector performance including noise, gain, drift speed and charge collection…

Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN…

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…

The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…

This study presents a fabrication process for lithium-drifted silicon (Si(Li)) detectors that, compared to previous methods, allows for mass production at a higher yield, while providing a large sensitive area and low leakage currents at…

A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT…

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…

We report on the design and performance of a mixed-signal application specific integrated circuit (ASIC) dedicated to avalanche photodiodes (APDs) in order to detect hard X-ray emissions in a wide energy band onboard the International Space…

CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout…