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Using temperature dependent Raman spectroscopy we address the question of how the transition from bulk to few atomic layers affects the charge density wave (CDW) phases in 1T-TaS2. We find that for crystals with thickness larger than approx…

介观与纳米尺度物理 · 物理学 2019-10-30 Adina Luican-Mayer , Jeffrey R. Guest , Saw-Wai Hla

We employ low-frequency Raman spectroscopy to study the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition in 1T-TaS2 ultrathin flakes protected from oxidation. We identify new modes originating from C phase…

Electronic phases that lie outside the equilibrium ground state offer a route to explore competing configurations in correlated materials. In 1T-TaS2, ultrafast excitation accesses a metallic hidden phase that is distinct from the…

强关联电子 · 物理学 2026-05-22 Turgut Yilmaz , Anil Rajapitamahuni , Suji Park , Houk Jang , Asish K. Kundu , Elio Vescovo

We present a state-of-the-art x-ray diffraction study of the charge density wave order in 1T-TaS2 as a function of temperature and pressure. Our results prove that the charge density wave, which we characterize in terms of wave vector,…

强关联电子 · 物理学 2013-03-27 T. Ritschel , J. Trinckauf , G. Garbarino , M. Hanfland , M. v. Zimmermann , H. Berger , B. Buechner , J. Geck

We investigate mechanically exfoliated thin 1T-TaS$_2$ with scanning tunneling microscopy at room temperature. Sample preparation without air exposure enables access to intrinsic charge-density-wave (CDW) phases of thin 1T-TaS$_2$. At room…

强关联电子 · 物理学 2023-02-09 Wooin Yang , Dowook Kim , Hyoung Kug Kim , Tae-Hwan Kim

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage…

Layered van der Waals materials are exciting as they often host multiple, competing electronic phases. This article reports experimental observation of the co-existence of insulating and metallic phases deep within the commensurate charge…

介观与纳米尺度物理 · 物理学 2021-12-23 Sruthi S , Hemanta Kumar Kundu , Prasad Vishnubhotla , Aveek Bid

Transitions between different charge density wave (CDW) states in quasi-two-dimensional materials may be accompanied also by changes in the inter-layer stacking of the CDW. Using MeV ultrafast electron diffraction, the out-of-plane stacking…

材料科学 · 物理学 2017-11-09 L. Le Guyader , T. Chase , A. Reid , R. K. Li , D. Svetin , X. Shen , T. Vecchione , X. J. Wang , D. Mihailovic , H. A. Dürr

Polymorphic phases and collective phenomena - such as charge density waves (CDWs) - in transition metal dichalcogenides (TMDs) dictate the physical and electronic properties of the material. Most TMDs naturally occur in a single given…

This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top…

We study the electronic structure of bulk 1T-TaSe$_2$ in the charge density wave phase at low temperature. Our spatially and angle resolved photoemission (ARPES) data show insulating areas coexisting with metallic regions characterized by a…

Transport studies of atomically thin 1T-TaS2 have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched…

The layered transition metal dichalcogenide, TaSe2, exhibits rich electronic phenomena across its polymorphs, 1T, 2H, and 3R, largely driven by differences in atomic coordination and c-axis stacking. In the 1T phase, octahedral coordination…

超导电性 · 物理学 2026-02-13 Kusal Dharmasiri , Maxim Avdeev , Despina Louca

We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS$_2$ for various thicknesses in the high-temperature (undistorted) phase and the low-temperature commensurate charge density…

Suppressing of an ordered state that competes with superconductivity is one route to enhance superconducting transition temperatures. Whereas the effect of suppressing magnetic states is still not fully understood, materials featuring…

For layered materials, the interlayer stacking is a critical degree of freedom tuning electronic properties, while its microscopic characterization faces great challenges. The transition-metal dichalcogenide 1T-TaS$_2$ represents a novel…

材料科学 · 物理学 2025-08-01 Li Cheng , Linpeng Nie , Xuanyu Long , Li Liang , Dan Zhao , Jian Li , Zheng Liu , Tao Wu , Xianhui Chen , Xiaolong Zou

We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means…

介观与纳米尺度物理 · 物理学 2024-06-19 A. Mohammadzadeh , A. Rehman , F. Kargar , S. Rumyantsev , J. M. Smulko , W. Knap , R. K. Lake , A. A. Balandin

Recently, many exotic electronic states, such as quantum spin liquid (QSL) and superconductivity (SC), have been extensively discovered and introduced in layered transition metal dichalcogenides 1T-TaS2 by controlling their complex…

Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a…

材料科学 · 物理学 2022-06-01 Jeffrey D. Cain , Amin Azizi , Matthias Conrad , Sinéad M. Griffin , Alex Zettl

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex…

介观与纳米尺度物理 · 物理学 2016-11-15 A. W. Tsen , R. Hovden , D. Z. Wang , Y. D. Kim , J. Okamoto , K. A. Spoth , Y. Liu , W. J. Lu , Y. P. Sun , J. Hone , L. F. Kourkoutis , P. Kim , A. N. Pasupathy
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