相关论文: Dual-Gate GaAs-Nanowire FET for Room Temperature C…

The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport…

We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…

Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing.…

We propose a fast, scalable all-optical design for arbitrary two-qubit operations for defect qubits in diamond (NV centers) and in silicon carbide, which are promising candidates for room temperature quantum computing. The interaction…

The implementation of a high-fidelity two-qubit quantum logic gate remains an outstanding challenge for isolated solid-state qubits such as Nitrogen-Vacancy (NV) centers in diamond. In this work, we show that by driving pairs of NV centers…

Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field…

While the accuracy of qubit operations has been greatly improved in the last decade, further development is demanded to achieve the ultimate goal: a fault-tolerant quantum computer that can solve real-world problems more efficiently than…

Implementations for quantum computing require fast single- and multi-qubit quantum gate operations. In the case of optically controlled quantum dot qubits theoretical designs for long-range two- or multi-qubit operations satisfying all the…

We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground…

A GaAs/AlGaAs based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristic is proposed. We have developed a two-particle Green's…

In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green's formalism…

We explore the use of fractional control-not gates in quantum thermodynamics. The Nth-root gate allows for a paced application of two-qubit operations. We apply it in quantum thermodynamic protocols for charging a quantum battery. Circuits…

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

When a quantum system is subject to a thermal gradient it may sustain a steady non-equilibrium heat current, by entering into a so-called non equilibrium steady state (NESS). Here we show that NESS constitute a thermodynamic resource that…

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated…

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…

Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon double quantum dots. However, the two-qubit gates in experiments are easily suffered from charge noise, which is still a key challenge. Geometric gates which…

Systems of individual electrons electrostatically trapped on condensed noble gas surfaces have recently attracted considerable interest as potential platforms for quantum computing. The electrons serve as charge qubits in the system, and…

We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a…