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We study the influence of sample termination on the electronic properties of the novel quantum spin Hall insulator monolayer $1T'$-WTe$_2$. For this purpose, we construct an accurate, minimal 4-orbital tight-binding model with spin-orbit…

介观与纳米尺度物理 · 物理学 2019-06-12 Alexander Lau , Rajyavardhan Ray , Daniel Varjas , Anton Akhmerov

The quantum anomalous Hall state with a large band gap and a high Chern number is significant for practical applications in spintronics. By performing first-principles calculations, we investigate electronic properties of the fully…

介观与纳米尺度物理 · 物理学 2023-10-10 Zhen Zhang , Zhichao Zhou , Xiaoyu Wang , Huiqian Wang , Xiuling Li , Xiao Li

We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$…

介观与纳米尺度物理 · 物理学 2021-01-04 Jose H. Garcia , Marc Vila , Chuang-Han Hsu , Xavier Waintal , Vitor M. Pereira , Stephan Roche

We analyze the Landau level (LL) structure and spin Hall effect in a MoS2 trilayer. Due to orbital asymmetry, the low-energy Dirac fermions become heavily massive and the LL energies grow linearly with $B$, rather than with $\sqrt{B}$.…

介观与纳米尺度物理 · 物理学 2013-02-06 Xiao Li , Fan Zhang , Qian Niu

We propose an effective lattice Hamiltonian for monolayer MoS$_2$ in order to describe the low-energy band structure and investigate the effect of perpendicular electric and magnetic fields on its electronic structure. We derive a…

介观与纳米尺度物理 · 物理学 2013-09-04 Habib Rostami , Ali G. Moghaddam , Reza Asgari

We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…

材料科学 · 物理学 2015-07-01 Shiva Safaei , Marta Galicka , Perla Kacman , Ryszard Buczko

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…

The in-plane anomalous Hall effect occurs when magnetization lies within the same plane as the electric field and Hall current, and requires magnetic point groups lacking rotational or mirror symmetries. While it is observed in both Weyl…

材料科学 · 物理学 2026-01-12 Hiroto Saito , Takashi Koretsune

The spin orientation of electronic wavefunctions in crystals is an internal degree of freedom, typically insensitive to electrical knobs. We argue from a general symmetry analysis and a $\vec k \cdot \vec p$ perspective, that monolayer…

介观与纳米尺度物理 · 物理学 2019-01-03 Li-kun Shi , Justin C. W. Song

We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based…

We treat elementary excitations, the spin-liquid state, and the anomalous Hall effect (including the quantum one in purely 2D situation) in layered highly correlated systems. The mechanisms of the formation of a topological state associated…

强关联电子 · 物理学 2022-03-02 V. Yu. Irkhin , Yu. N. Skryabin

The development of quantum materials and the tailoring of their functional properties is of fundamental interest in materials science. Here, a new design concept is proposed for the robust quantum anomalous Hall effect via entropy…

介观与纳米尺度物理 · 物理学 2025-06-05 Syeda Amina Shabbir , Frank Fei Yun , Muhammad Nadeem , Xiaolin Wang

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…

介观与纳米尺度物理 · 物理学 2021-01-05 Muhammad Nadeem , Alex R. Hamilton , Michael S. Fuhrer , Xiaolin Wang

The anomalous Hall effect (AHE) is a consequence of spin-orbit coupling in a ferromagnetic metal and is related primarily to density-matrix response to an electric field that is off-diagonal in band index. For this reason disorder…

介观与纳米尺度物理 · 物理学 2009-11-11 N. A. Sinitsyn , A. H. MacDonald , T. Jungwirth , V. K. Dugaev , Jairo Sinova

Topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In…

介观与纳米尺度物理 · 物理学 2019-05-29 Kazuki Nakazawa , Manuel Bibes , Hiroshi Kohno

Monolayer 1T'-WTe$_2$ has been the first two-dimensional crystal where a quantum spin Hall phase was experimentally observed. In addition, recent experiments and theoretical modeling reported the presence of a robust excitonic insulating…

介观与纳米尺度物理 · 物理学 2023-02-13 Antimo Marrazzo

Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…

介观与纳米尺度物理 · 物理学 2015-03-19 Gang Xu , Jing Wang , Claudia Felser , Xiao-Liang Qi , Shou-Cheng Zhang

We used density functional theory to investigate the lateral heteromonolayers of WTe2 and MoTe2. We confirmed that topologically nontrivial and trivial phases are energetically favored for the WTe2 and MoTe2 monolayers, taken out of bulk…

材料科学 · 物理学 2023-10-03 Mari Ohfuchi , Akihiko Sekine

We recently proposed quantum simulators of "twistronic-like" physics based on ultracold atoms and syntheticdimensions [Phys. Rev. Lett. 125, 030504 (2020)]. Conceptually, the scheme is based on the idea that aphysical monolayer optical…

The orbital Hall effect (OHE) is attracting recent interest due to its fundamental science implications and potential applications in orbitronics and spintronics. Unlike the spin Hall effect, the connection between the OHE and band topology…

介观与纳米尺度物理 · 物理学 2024-11-04 Baokai Wang , Yi-Chun Hung , Hsin Lin , Sheng Li , Rui-Hua He , Arun Bansil
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