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相关论文: Intrinsic doping limitations in inorganic lead hal…

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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control…

A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…

材料科学 · 物理学 2016-04-04 Hyungyu Jin , Bartlomiej Wiendlocha , Joseph P. Heremans

Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the…

材料科学 · 物理学 2012-03-06 Steven Demers , Axel van de Walle

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

Over the last few years of the heyday of hybrid halide perovskites, so many metal cations additives have been tested to improve their optoelectronic properties that it is already difficult to find an element that has not yet been tried. In…

Cui et al. describe the fabrication and characterization of planar pn-junction solar cells based on lead-halide perovskites. The doping densities measured using Hall effect measurements vary from $N_D = 10^{12} cm^{-3}$ to $8\times 10^{12}…

应用物理 · 物理学 2019-07-26 Thomas Kirchartz , David Cahen

Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and…

材料科学 · 物理学 2018-08-17 Tianshu Li , Xingang Zhao , Dongwen Yang , Mao-Hua Du , Lijun Zhang

Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide…

材料科学 · 物理学 2022-01-03 Haibo Xue , Geert Brocks , Shuxia Tao

Zinc phosphide (Zn3P2) has had a long history of scientific interest largely because of its potential for earth-abundant photovoltaics. To realize high-efficiency Zn3P2 solar cells, it is critical to understand and control point defects in…

材料科学 · 物理学 2023-11-01 Zhenkun Yuan , Yihuang Xiong , Geoffroy Hautier

Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly…

材料科学 · 物理学 2021-07-21 Lucia Iglesias , Manuel Bibes , Julien Varignon

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

Electron- and hole-doped La$_2$CoMnO$_6$(LCMO) are investigated using first principles DFT calculations. Hole and electron doping are achieved respectively by introducing Sr$^{2+}$ at La$^{3+}$ sites and by inducing O-site vacancies in…

材料科学 · 物理学 2021-09-02 Anasua Khan , Swastika Chatterjee , T. K. Nath , A. Taraphder

We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects…

材料科学 · 物理学 2019-01-17 Sieun Chae , Kelsey Mengle , John T. Heron , Emmanouil Kioupakis

Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of…

超导电性 · 物理学 2011-12-01 Tatsuya Honma , Pei-Herng Hor

Perovskite nitrides are starting to be explored for their promising properties distinct from their oxide counterparts. Here, through first-principles density functional computations, we study the intricate relationship between…

材料科学 · 物理学 2024-08-27 Harshvardhan Singh Deora , Awadhesh Narayan

One effective way to prevent toxicity and improve the stability of materials for photovoltaic applications is to exclude lead and organic molecules from perovskite materials. Specifically, the CsSn1-xGexI3 appears to be a promising…

SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \textit{ZT} in SnSe. However, to date a comprehensive…

The hybrid halide perovskites, the very performant compounds in photovoltaic applications, possess large Seebeck coefficient and low thermal conductivity making them potentially interesting high figure of merit ($ZT$) materials. For this…

Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had…

材料科学 · 物理学 2021-12-08 Basita Das , Irene Aguilera , Uwe Rau , Thomas Kirchartz

Two-dimensional (2D) $\beta$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type…

介观与纳米尺度物理 · 物理学 2025-01-08 Rafael Costa-Amaral , Soungmin Bae , Vu Thi Ngoc Huyen , Yu Kumagai
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