相关论文: $C_2C_N$ as a 2 eV Single-Photon Emitter Candidate…
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate…
Forming single-photon emitters (SPEs) in insulating hexagonal boron nitride (hBN) has sparked wide interests in the quantum photonics. Despite significant progress, it remains challenging to deterministically create SPEs at precise…
We investigate the role of topological defects in exciton behavior in (6,5) semiconducting single-walled carbon nanotubes using density functional theory. Our study identifies the helical Stone-Wales defect as a prominent trap for triplet…
Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have…
Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of…
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…
Nitrogen interstitials (N$_\mathrm{i}$) have the lowest formation energy among intrinsic defects of hexagonal boron nitride (hBN) under n-type and N-rich conditions. Using an optimized hybrid functional, which reproduces the gap and…
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both…
Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence…
Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor…
Mechanically isolated defect centers in hexagonal boron nitride are promising coherent quantum emitters, yet spectral instabilities persist, and their spin-related nature remains unclear. Here we investigate a single mechanically isolated…
We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2eV.…
We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
Realization of integrated photonic circuits on a single chip requires controlled manipulation and integration of solid-state quantum emitters with nanophotonic components. Previous works focused on emitters embedded in a three-dimensional…
Although point defects in hexagonal boron nitride exhibiting single-photon emission attract considerable interest, a broader understanding of defect physics and chemistry in hBN remains limited, potentially hindering further development.…
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…
Single walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near infrared, electrically driven, classical or non-classical emitters. Unlike in…