相关论文: Piezoelectricity in Nominally Centrosymmetric Phas…

A strong coupling between electric polarization and elastic deformation in solids is an important factor in creating useful electromechanical nanodevices. Such coupling is typically allowed in insulating materials with inversion symmetry…

We study from first-principles calculations the ferroelectric structural phase transition of Pb$_5$Ge$_3$O$_{11}$ crystal. The calculations of phonons and Born effective charges of the paraelectric phase allow us to identify a polar…

The compounds exhibit piezoelectricity, which demands to break inversion symmetry, and then to be a semiconductor. For $\mathrm{Ga_2O_3}$, the orthorhombic case ($\epsilon$-$\mathrm{Ga_2O_3}$) of common five phases breaks inversion…

In this study, we succeeded in synthesizing new antiperovskite phosphides $M$Pd$_3$P ($M$ = Ca, Sr, Ba) and discovered the appearance of a superconducting phase (0.17 $\leq$ $x$ $\leq$ 0.55) in a solid solution (Ca$_{1-x}$Sr$_x$)Pd$_3$P.…

Piezoresistivity is the most commonly used sensing principle in cement-based smart composites for strain-monitoring applications. Nonetheless, the need for external electric power to conduct electrical resistivity measurements restricts the…

Introducing symmetry breaking in materials enables the emergence of functionalities. This can be microscopically and macroscopically driven by applying external stimuli such as mechanical stress, electric field, temperature, and chemical…

Lead-free ceramics (K0.44+xNa0.52Li0.04)(Nb0.86Ta0.10Sb0.04)O3+x/2 (x=-0,06) were prepared by conventional solid state sintering. The results indicate a correlation between crystalline symmetry and electrical properties. Higher…

In this work, we address the issue of peaking of piezoelectric response at a particular composition in the morphotropic phase boundary (MPB) region of (Pb0.940Sr0.06)(ZrxTi1-x)O3 (PSZT) piezoelectric ceramics. We present results of…

In recent years, the investigation of low-dimensional ferroelectrics has attracted great attention for their promising applications in nano devices. Piezoelectricity is one of the most core properties of ferroelectric materials, which plays…

Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($\sigma$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever…

A technique for obtaining efficient bulk second order susceptibility in non centro-symmetric Photonic Crystals (PC) made from centro-symmetric materials is discussed. The effect is based on the electric quadrupole effect, strong…

Charge density waves (CDWs) with multi-component order parameters can break unexpected symmetries through the interplay of nearly degenerate instabilities. In the widely investigated material 1T-TiSe$_2$, a central question is whether the…

The stability of a high-symmetry $P4mm$ polar phase in seventeen short-period ferroelectric perovskite superlattices with polar discontinuity is studied from first principles within the density-functional theory. It is shown that in most…

At first sight piezoresponse force microscopy (PFM) seems an ideal technique for the determination of piezoelectric coefficients (PCs), thus making use of its ultra-high vertical resolution (<0.1 pm/V). Christman et al. \cite{Chr98} first…

In this review we address some of the experimental challenges found in the x-ray diffraction characterization of the low-symmetry phases recently discovered in the PZT, PZN-PT and PMN-PT piezoelectric systems around their morphotropic phase…

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic…

We performed factor-group analysis of all phonons in possible monoclinic C2/c and C2 structures of BiMnO3 and compared it with our experimental infrared and Raman spectra. We conclude that the crystal structure is centrosymmetric C2/c in…

This paper presents multiple-modes Scanning Probe Microscopy (SPM) studies on characterize resistance switching (RS), polarization rotation (PO) and surface potential changes in copper doped ZnO (ZnO:Cu) thin films. The bipolar RS behavior…

The structure of a single antiparallel ferroelectric domain wall in LiNbO3 is quantitatively mapped by piezoelectric force microscopy (PFM) with calibrated probe geometry. The PFM measurements are performed for 49 probes with the radius…

Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography.…