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相关论文: Accurate force field of two-dimensional ferroelect…

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Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…

材料科学 · 物理学 2024-02-29 Liyi Bai , Changming Ke , Zhongshen Luo , Tianyuan Zhu , Lu You , Shi Liu

The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…

材料科学 · 物理学 2021-02-03 Jing Wu , Yuzhi Zhang , Linfeng Zhang , Shi Liu

Recent studies highlight the scientific importance and broad application prospects of two-dimensional (2D) sliding ferroelectrics, which prevalently exhibit vertical polarization with suitable stackings. It is crucial to understand the…

材料科学 · 物理学 2024-07-23 Shihan Deng , Hongyu Yu , Junyi Ji , Changsong Xu , Hongjun Xiang

Recent advances in ferroelectrics highlight the role of three-dimensional (3D) polar entities in forming topological polar textures and generating giant electromechanical responses, during polarization rotation. However, current electron…

材料科学 · 物理学 2025-06-10 Jinho Byun , Keeyong Lee , Myoungho Jeong , Eunha Lee , Jeongil Bang , Haeryong Kim , Geun Ho Gu , Sang Ho Oh

Complex strain status can exist in 2D materials during their synthesis process, resulting in significant impacts on the physical and chemical properties. Despite their prevalence in experiments, their influence on the material properties…

材料科学 · 物理学 2023-08-23 Dongyu Bai , Yihan Nie , Jing Shang , Minghao Liu , Yang Yang , Haifei Zhan , Liangzhi Kou , Yuantong Gu

Ferroelectric materials with switchable spontaneous polarization underpin non-volatile memories, transistors, sensors, and emerging neuromorphic chips. Their performance and stability are governed by polarization dynamics and domain…

材料科学 · 物理学 2026-03-20 Dongyu Bai , Ri He , Junxian Liu , Liangzhi Kou

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly…

材料科学 · 物理学 2018-04-18 Chengxi Huang , Yongping Du , Haiping Wu , Hongjun Xiang , Kaiming Deng , Erjun Kan

Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their…

介观与纳米尺度物理 · 物理学 2021-09-14 Fan Zhang , Zhe Wang , Lixuan Liu , Anmin Nie , Yongji Gong , Wenguang Zhu , Chenggang Tao

Electric field-induced studies, including phase transition and polarization hysteresis, for ferroelectric HfO2 at the atomic scale are critical since they can largely affect its application in ferroelectric and dielectric devices. However,…

材料科学 · 物理学 2025-11-14 Po-Yen Chen , Teruyasu Mizoguchi

Fluid ferroelectrics, a recently discovered class of liquid crystals that exhibit switchable, long-range polar order, offer opportunities in ultrafast electro-optic technologies, responsive soft matter, and next-generation energy materials.…

Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other materials to control electronic phase transitions and…

Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

材料科学 · 物理学 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Compared to the well studied two-dimensional (2D) ferroelectricity, much rare is the appearance of 2D antiferroelectricity, where local dipoles from the nonequivalent sublattices within 2D monolayers are oppositely orientated. Using NbOCl2…

材料科学 · 物理学 2025-08-22 Jiawei Mao , Yinglu Jia , Gaoyang Gou , Shi Liu , Xiao Cheng Zeng

The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…

材料科学 · 物理学 2024-03-05 Wei Xun , Chao Wu , Hanbo Sun , Weixi Zhang , Yin-Zhong Wu , Ping Li

We present a general procedure to introduce electronic polarization into classical Molecular Dynamics (MD) force-fields using a Neural Network (NN) model. We apply this framework to the simulation of a solid-liquid interface where the…

计算物理 · 物理学 2021-03-31 Nicodemo Di Pasquale , Joshua D. Elliott , Panagiotis Hadjidoukas , Paola Carbone

Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications.…

介观与纳米尺度物理 · 物理学 2024-10-07 Jing Liang , Dongyang Yang , Jingda Wu , Yunhuan Xiao , Kenji Watanabe , Takashi Taniguchi , Jerry I. Dadap , Ziliang Ye

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic…

Two-dimensional (2D) ferroelectrics offer the potential for ultrathin flexible nanoelectronics, typically utilizing a metal-ferroelectric-metal sandwich structure as the functional unit. Electrodes can either contribute free carriers to…

材料科学 · 物理学 2023-11-17 Jiawei Huang , Changming Ke , Zhuang Qian , Shi Liu
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