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相关论文: Valley Degree of Freedom in Two-Dimensional van de…

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The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…

材料科学 · 物理学 2023-09-06 Ping Li , Bang Liu , Wei-Xi Zhang , Zhi-Xin Guo

The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of…

介观与纳米尺度物理 · 物理学 2017-01-11 Mikkel Settnes , Stephen R. Power , Mads Brandbyge , Antti-Pekka Jauho

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…

强关联电子 · 物理学 2026-05-05 Youngjae Kim

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…

材料科学 · 物理学 2017-01-04 Wen-Yi Tong , Shi-Jing Gong , Xiangang Wan , Chun-Gang Duan

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…

介观与纳米尺度物理 · 物理学 2020-07-02 Hui-Ying Mu , Yi-Tong Yao , Jie-Ru Li , Guo-Cai Liu , Chao He , Ying-Jie Sun , Guang Yang , Xing-Tao An , Yong-Zhe Zhang , Jian-Jun Liu

Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic materials was focused on three-dimensional (3D) materials. However,…

材料科学 · 物理学 2019-02-25 Youfang Lai , Zhigang Song , Yi Wan , Mingzhu Xue , Yu Ye , Lun Dai , Wenyun Yang , Honglin Du , jinbo Yang

Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Jie Shan , kin Fai Mak

Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…

介观与纳米尺度物理 · 物理学 2017-05-25 T. Sekera , C. Bruder , E. J. Mele , R. P. Tiwari

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…

In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…

介观与纳米尺度物理 · 物理学 2018-08-01 M. A. Mueed , Md. Shafayat Hossain , I. Jo , L. N. Pfeiffer , K. W. West , K. W. Baldwin , M. Shayegan

In a recent paper, it was shown that, under the action of the lateral van der Waals (vdW) force due to a perfectly conducting corrugated surface, a neutral anisotropic polarizable particle in vacuum can be attracted not only to the nearest…

量子物理 · 物理学 2021-12-15 Lucas Queiroz , Edson C. M. Nogueira , Danilo T. Alves

Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…

光学 · 物理学 2023-06-06 Navdeep Rana , Gopal Dixit

Valley degrees of freedom offer a potential resource for quantum information processing if they can be effectively controlled. We discuss an optical approach to this problem in which intense light breaks electronic symmetries of a…

介观与纳米尺度物理 · 物理学 2016-01-11 Arijit Kundu , H. A. Fertig , Babak Seradjeh

Recent advances in condensed matter physics have shown that the valley degree of freedom of electrons in 2D materials with hexagonal symmetry, such as graphene, h-BN, and TMDs, can be efficiently exploited, leading to the emergent field of…

光学 · 物理学 2018-11-02 S. Guddala , R. Bushati , M. Li , A. B. Khanikaev , V. M. Menon

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…

介观与纳米尺度物理 · 物理学 2024-04-03 Konstantin Davydov , Xi Zhang , Wei Ren , Matthew Coles , Logan Kline , Bryan Zucker , Kenji Watanabe , Takashi Taniguchi , Ke Wang

Van der Waals layered and 2D materials constitute an extraordinary playground for condensed matter physics, since the strong confinement of wavefunctions to two dimensions supports a diverse set of correlated phenomena. By creating…

介观与纳米尺度物理 · 物理学 2023-08-14 Joohyung Park , Ayan N. Batyrkhanov , J. R. Schaibley , Oliver L. A. Monti

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained…

材料科学 · 物理学 2022-06-30 Abhishek Sharan , Stephan Lany , Nirpendra Singh
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