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相关论文: Electrical switching of antiferromagnetic CoO | Pt…

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We study current-induced switching of the N\'eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path…

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…

介观与纳米尺度物理 · 物理学 2022-01-06 F. Schreiber , H. Meer , C. Schmitt , R. Ramos , E. Saitoh , L. Baldrati , M. Kläui

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…

Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…

材料科学 · 物理学 2018-07-04 Markus Meinert , Dominik Graulich , Tristan Matalla-Wagner

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…

材料科学 · 物理学 2020-12-15 H. Meer , F. Schreiber , C. Schmitt , R. Ramos , E. Saitoh , O. Gomonay , J. Sinova , L. Baldrati , M. Kläui

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a…

Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely…

介观与纳米尺度物理 · 物理学 2023-09-28 Kutay Akin , Hasan Piskin , Ege Selvi , Emre Demircanli , Sevval Ari , Mohammad Hassan Ramezan zadeh , Bayram Kocaman , Ozhan Ozatay

Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse…

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced…

The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are…

Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the…

Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…

We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse…

介观与纳米尺度物理 · 物理学 2018-06-13 X. Z. Chen , R. Zarzuela , J. Zhang , C. Song , X. F. Zhou , G. Y. Shi , F. Li , H. A. Zhou , W. J. Jiang , F. Pan , Y. Tserkovnyak

In information technology devices, current-driven state switching is crucial in various disciplines including spintronics, where the contribution of heating to the switching mechanism plays an inevitable role. Recently, current-driven…

材料科学 · 物理学 2024-05-21 Myoung-Woo Yoo , Virginia O. Lorenz , Axel Hoffmann , David G. Cahill

The thermodynamics of the antiferromagnetic ordering transition in NiO and the photoelectron spectra in the antiferromagnetic phase are studied by the Variational Cluster Approximation. Using realistic Racah parameters to describe the…

强关联电子 · 物理学 2015-04-01 R. Eder

We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope.…

介观与纳米尺度物理 · 物理学 2020-08-27 Felix Schreiber , Lorenzo Baldrati , Christin Schmitt , Rafael Ramos , Eiji Saitoh , Romain Lebrun , Mathias Kläui

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…

We report Electron Paramagnetic Resonance measurements on single crystalline and powder samples of Nd_0.5Ca_0.5MnO_3 across the charge-ordering transition at T_co=240 K down to the antiferromagnetic ordering transition at T_N = 140 K. The…

强关联电子 · 物理学 2021-05-26 Janhavi P. Joshi , Rajeev Gupta , A. K. Sood , S. V. Bhat , A. R. Raju , C. N. R. Rao

We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…

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