相关论文: TeraFET terahertz detectors with spatially non-uni…

We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond…

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…

We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We…

Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…

We report on the numerical and theoretical results of sub-THz and THz detection by a current-driven InGaAs/GaAs plasmonic Field-Effect Transistor (TeraFET). New equations are developed to account for the channel length dependence of the…

Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…

We analyze the terahertz detection characteristics of resonant tunneling diodes (RTDs) using a set of simple equations that covers three detection modes; (i) direct detection, (ii) amplified detection, and (iii) self-homodyne (coherent)…

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two…

Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive…

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…

The new TeraFET design with identical source and drain antennas enables a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz (THz) range of frequencies at room temperature. It could…

We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…

I report on the experimental observation of DC instability and self-amplification through stimulated emission of 0.2 and 1.63 THz radiation using InGaAs/GaAs HEMT operating in the deep saturation regime at room temperature. I demonstrate…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

We characterize the terahertz detection mechanism in antenna-coupled metallic single-walled carbon nanotubes. At low temperature, 4.2 K, a peak in the low-frequency differential resistance is observed at zero bias current due to non-Ohmic…

Using molecular dynamics simulations, we investigate systematically the water permeation properties across the single-walled carbon nanotube (SWCNT) in the presence of the terahertz electric field (TEF). With the TEF normal to the nanotube,…

We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction…