相关论文: Anti-commutative dynamical magneto-electric respon…
The dynamics of magnetization in the presence of spin-transfer torque was studied. We derived the equation for the motion of magnetization in the presence of a spin current by using the local equilibrium assumption in non-equilibrium…
The Mn-Bi-Te family displaying magnetism and non-trivial topological properties has received extensive attention. Here, we predict that the antiferromagnetic structure of Mn$_{3}$Bi$_{2}$Te$_{6}$ with three MnTe layers is energetically…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
We theoretically show the negative refraction existing in M\"{o}bius molecules. The negative refractive index is induced by the non-trivial topology of the molecules. With the M\"{o}bius boundary condition, the effective electromagnetic…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
The electromagnetic response of topological insulators is governed by axion electrodynamics, which features a topological magnetoelectric term in the Maxwell equations. As a consequence magnetic fields become the source of electric fields…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
Electronic topological states of matter exhibit novel types of responses to electromagnetic fields. The response of strong topological insulators, for instance, is characterized by a so-called axion term in the electromagnetic Lagrangian…
Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…
The toroidal response is numerically investigated in a multifold double-ring metamaterials at the antibonding magnetic-dipole mode (i.e., antiparallel magnetic dipoles in one double-ring fold). This intriguing toroidal resonance in…
The properties of antiferromagnetic materials with violated space-time parity are considered. Particular attention is given to the bismuth ferrite BiFeO3 ferroelectric magnet. This material is distinguished from other antiferromagnets in…
Topological insulators are characterized by the presence of gapless surface modes protected by time-reversal symmetry. In three space dimensions the magnetoelectric response is described in terms of a bulk theta term for the electromagnetic…
We have revisited the magnetic structure of manganese phosphorus trisulfide MnPS3 using neutron diffrac- tion and polarimetry. MnPS3 undergoes a transition toward a collinear antiferromagnetic order at 78 K. The resulting magnetic…
We revisit the description of the magnetic field around antiferromagnetic magnetoelectrics in the context of recent developments regarding magnetoelectric monopoles. Using Maxwell's equations, we calculate the magnetic and electric fields…
As the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi$_2$Te$_4$ has provided a material platform to realize various emergent phenomena arising from the interplay of magnetism and band topology. Here by…
We predict ultrafast switching in a chiral anti-ferromagnet that occurs at femtosecond times, nearly 5 orders of magnitude faster than the torque induced nanosecond switching previously observed. The physical mechanism, quite different from…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
We propose a mechanism to generate a static magnetization via {\em axial magnetoelectric effect} (AMEE). Magnetization ${\bf M} \sim {\bf E}_5(\omega)\times {\bf E}_5^{*}(\omega)$ appears as a result of the transfer of the angular momentum…