相关论文: Magnetization-tuned topological quantum phase tran…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range, which can be turned on and off corresponding to the…
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and…
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…
In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric…
The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has…
Tuning topological and magnetic properties of materials by applying an electric field is widely used in spintronics. In this work, we find a topological phase transition from topologically trivial to nontrivial states at an external…
Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{\'e}…
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…
Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when…
In most cases, to observe quantized Hall plateaux, an external magnetic field is applied in intrinsic magnetic topological insulators $\mathrm{MnBi_2Te_4}$. Nevertheless, whether the nonzero Chern number ($C\neq 0$) phase is a quantum…
Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order…
This short review appears on the occasion of the fifth anniversary of discovery of intrinsic magnetic topological insulators (MTIs) of the MnBi${}_2$Te${}_4$ family, which have attracted a great deal of attention recently. This family of…
Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time-reversal symmetry (TRS) breaking. In most cases, one could break…
Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a…
The intrinsically anti-ferromagnetic topological insulator, MnBi$_2$Te$_4$ (MBT), has garnered significant attention recently. The excitement for this layered van der Waals bonded compound stems from its potential to host numerous exotic…
We propose a new mechanism to explain the quantum anomalous Hall (QAH) effect and the electric-field-induced topological phase transition in AB-stacked MoTe${}_2$/WSe${}_2$ moir\'e heterobilayers at $\nu=1$ hole filling. We suggest that the…
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as…
As the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi$_2$Te$_4$ has provided a material platform to realize various emergent phenomena arising from the interplay of magnetism and band topology. Here by…