相关论文: Large perpendicular magnetic anisotropy in Ta/CoFe…
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA)…
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy…
We present a theoretical study on interfacial magnetocrystalline anisotropy for Fe/MgAl$_2$O$_4$. This system has a very small lattice mismatch at the interface and therefore is suitable for realizing a fully coherent ferromagnet/oxide…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness…
Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of CoFeGe well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy…
We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by…
Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient for the development of electrically controlled spintronic devices. Due to their relatively large spin-polarization, high Curie temperature and low…
Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing…
We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible…
Search for ultrathin magnetic film with large perpendicular magnetocrystalline anisotropy (PMA) has been inspired for years by the continuous miniaturization of magnetic units in spintronics devices. The common magnetic materials used in…
We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the…
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ),…
By performing systematic $ab$ $initio$ density functional calculations, here we study two relativity-induced properties of atomically thin ferromagnetic (FM) Cr$_2$Ge$_2$Te$_6$ films [monolayer (ML), bilayer (BL) and trilayer (TL) as well…
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…