相关论文: Logic Compatible High-Performance Ferroelectric Tr…

Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Artificial neural networks (ANNs) have had an enormous impact on a multitude of sectors, from research to industry, generating an unprecedented demand for tailor-suited hardware platforms. Their training and execution is highly…

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being…

Hyperdimensional (HD) computing involves encoding of baseline information into large hypervectors and repeated Boolean operations to generate the output class hypervectors which are stored in an associative memory. The classification task…

Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents…

As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…

Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials. In this study, we investigate the gate current and breakdown characteristics of…

Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO…

A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates…

Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures…

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel…

The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable…

Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM)…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…

In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM…

The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…