相关论文: Valley interference and spin exchange at the atomi…

One of the challenges with quantum simulation in ion traps is that the effective spin-spin exchange couplings are not uniform across the lattice. This can be particularly important in Penning trap realizations where the presence of an…

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…

Using renormalization group techniques, we study spectral and transport properties of a spinless interacting quantum dot consisting of two levels coupled to metallic reservoirs. For strong Coulomb repulsion $U$ and an applied Aharonov-Bohm…

Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and…

We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the…

The mesoscopic Stoner instability is an intriguing manifestation of symmetry breaking in isolated metallic quantum dots, underlined by the competition between single-particle energy and Heisenberg exchange interaction. Here we study this…

The phenomenon of Quantum Tunneling of Mesoscopic Spins is reviewed in the light of the behavior of the archetype of these systems: the molecular complex Mn12-ac. Most observations can be understood in the framework of the reduced Hilbert…

We investigate tunneling behavior between two bright solitons in a Bose-Einstein condensate with attractive contact interactions between atoms. The explicit tunneling properties including tunneling particles and oscillation period are…

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that…

We present experimental observations of interference between an atomic spin coherence and an optical field in a {\Lambda}-type gradient echo memory. The interference is mediated by a strong classical field that couples a weak probe field to…

Renormalized tunnel splitting with a finite distribution in the biaxial spin model for molecular magnets is obtained by taking into account the dipolar interaction of enviromental spins. Oscillation of the resonant tunnel splitting with a…

Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…

For Coulomb blockade peaks in the linear conductance of a quantum dot, we study the correction to the spacing between the peaks due to dot-lead coupling. This coupling can affect measurements in which Coulomb blockade phenomena are used as…

Ensembles of dopants have widespread applications in quantum technology. The miniaturization of corresponding devices is however hampered by dipolar interactions that reduce the coherence at increased dopant density. We theoretically and…

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…

We propose a reversible mechanism for switching Heisenberg-type exchange interactions between deposited transition metal adatoms from ferromagnetic to antiferromagnetic. Using first-principles calculations, we show that this mechanism can…

Charge carriers in two-dimensional transition metal dichalcogenides (TMDs), such as WSe$_2$, have their spin and valley-pseudospin locked into an optically-addressable index that is proposed as a basis for future information processing. The…

Multipath holographic interference in strong-field quantum tunnel ionization is key to revealing sub-Angstrom attosecond dynamics for molecular movies. This critical sub-cycle motion is often obscured by longer time-scale effects such as…

We investigate two-photon transitions to the electron-hole scattering continuum in monolayer transition-metal dichalcogenides, and identify two contributions to this nonlinear optical process with opposite circularly polarized valley…